Effect of spatially variable effective mass on static and dynamic properties of resonant tunneling devices
dc.contributor.author | Mains, R. K. | en_US |
dc.contributor.author | Mehdi, Imran | en_US |
dc.contributor.author | Haddad, George I. | en_US |
dc.date.accessioned | 2010-05-06T21:26:33Z | |
dc.date.available | 2010-05-06T21:26:33Z | |
dc.date.issued | 1989-12-18 | en_US |
dc.identifier.citation | Mains, R. K.; Mehdi, I.; Haddad, G. I. (1989). "Effect of spatially variable effective mass on static and dynamic properties of resonant tunneling devices." Applied Physics Letters 55(25): 2631-2633. <http://hdl.handle.net/2027.42/69977> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/69977 | |
dc.description.abstract | The effect of incorporating a spatially variable effective mass in the Schrödinger equation method of resonant tunneling device modeling is investigated. It is shown that inclusion of this effect can produce an order of magnitude difference in the calculated peak current density of the static current voltage (I‐V) curve for the resonant tunneling diode. Results for a particular In0.53Ga0.47As‐AlAs structure show that much better agreement between theory and experiment is obtained by including this effect. Also, comparison of transient results for an In0.53Ga0.47As‐In0.52Al0.48As structure shows a significant change in the diode switching transients. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 266371 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Effect of spatially variable effective mass on static and dynamic properties of resonant tunneling devices | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for High‐Frequency Microelectronics, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/69977/2/APPLAB-55-25-2631-1.pdf | |
dc.identifier.doi | 10.1063/1.101958 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.identifier.citedreference | I. Mehdi and G. I. Haddad (unpublished). | en_US |
dc.identifier.citedreference | R. K. Mains, J. P. Sun, and G. I. Haddad, Appl. Phys. Lett. 55, 371 (1989). | en_US |
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dc.owningcollname | Physics, Department of |
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