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Impact ionization coefficients for electrons and holes in strained In0.2Ga0.8As and In0.15Ga0.63Al0.22As channels embedded in Al0.3Ga0.7As
dc.contributor.authorChen, Y. C.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:29:16Z
dc.date.available2010-05-06T21:29:16Z
dc.date.issued1993-01-01en_US
dc.identifier.citationChen, Y. C.; Bhattacharya, P. K. (1993). "Impact ionization coefficients for electrons and holes in strained In0.2Ga0.8As and In0.15Ga0.63Al0.22As channels embedded in Al0.3Ga0.7As." Journal of Applied Physics 73(1): 465-467. <http://hdl.handle.net/2027.42/70006>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70006
dc.description.abstractWe have measured impact ionization coefficients, α and β, in 150 Å pseudomorphically strained materials for the first time. The measurements were made on specially designed lateral p‐i‐n diodes. α and β in lattice‐matched GaAs layers are found to be lower than those in strained In0.2Ga0.8As and higher than those in strained In0.15Ga0.63Al0.22As. β is larger than α in all the samples. The results are discussed in terms of the changes in the band structure due to biaxial strain.  en_US
dc.format.extent3102 bytes
dc.format.extent288118 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleImpact ionization coefficients for electrons and holes in strained In0.2Ga0.8As and In0.15Ga0.63Al0.22As channels embedded in Al0.3Ga0.7Asen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70006/2/JAPIAU-73-1-465-1.pdf
dc.identifier.doi10.1063/1.353874en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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