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Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface
dc.contributor.authorBaird, R. J.en_US
dc.contributor.authorPotter, T. J.en_US
dc.contributor.authorKothiyal, Govind P.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:32:42Z
dc.date.available2010-05-06T21:32:42Z
dc.date.issued1988-06-13en_US
dc.identifier.citationBaird, R. J.; Potter, T. J.; Kothiyal, G. P.; Bhattacharya, P. K. (1988). "Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface." Applied Physics Letters 52(24): 2055-2057. <http://hdl.handle.net/2027.42/70043>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70043
dc.description.abstractWe have measured the distribution of group III metals at In0.53Ga0.47As/In0.52Al0.48As interfaces before and after annealing at 1085 K. We find little evidence for Al interdiffusion, but the Ga concentration profiles show some broadening on annealing. Also, the originally nearly constant In profiles develop strong modulations with near discontinuities at the original interfaces. This phenomenon is explained and modeled in terms of In diffusion in the chemical potential gradient established by the disparity of the Al and Ga mobilities and the requirement of III‐V stoichiometry in the alloys.en_US
dc.format.extent3102 bytes
dc.format.extent319024 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleIndium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interfaceen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumFord Motor Company, Research Staff, P.O. Box 2053, Dearborn, Michigan 48121‐2053en_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70043/2/APPLAB-52-24-2055-1.pdf
dc.identifier.doi10.1063/1.99579en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.identifier.citedreferenceJ. Crank, The Mathematics of Diffusion (Oxford University, London, 1976), p. 14ff.en_US
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dc.identifier.citedreferenceL. S. Darken and R. W. Gurry, Physical Chemistry of Metals (McGraw‐Hill, New York, 1953), p. 461ff.en_US
dc.owningcollnamePhysics, Department of


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