In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures
dc.contributor.author | Jaffe, Mark | en_US |
dc.contributor.author | Oh, J. E. | en_US |
dc.contributor.author | Pamulapati, Jagadeesh | en_US |
dc.contributor.author | Singh, J. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2010-05-06T21:32:53Z | |
dc.date.available | 2010-05-06T21:32:53Z | |
dc.date.issued | 1989-06-05 | en_US |
dc.identifier.citation | Jaffe, M.; Oh, J. E.; Pamulapati, J.; Singh, J.; Bhattacharya, P. (1989). "In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures." Applied Physics Letters 54(23): 2345-2346. <http://hdl.handle.net/2027.42/70045> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70045 | |
dc.description.abstract | We have determined the strain dependence of the in‐plane hole effective mass in pseudomorphic Inx Ga1−x As/Al0.15 Ga0.85As modulation‐doped heterostructures by low‐temperature Shubnikov–de Haas measurements. An effective mass equal to 0.18m0 is measured for x=0.2. The measured values are in good agreement with theoretical calculations. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 217416 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for High Frequency Microelectronics and Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70045/2/APPLAB-54-23-2345-1.pdf | |
dc.identifier.doi | 10.1063/1.101121 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
dc.identifier.citedreference | G. Osbourn, J. Schirber, T. Drummond, L. Dawson, B. Doyle, and I. Fritz, Appl. Phys. Lett. 49, 731 (1986). | en_US |
dc.identifier.citedreference | M. Jaffe, Y. Sekiguchi, J. East, and J. Singh, Superlatt. Microstruct. 4, 395 (1988). | en_US |
dc.identifier.citedreference | I. Fritz, J. Schirber, E. Jones, T. Drummond, and G. Osbourn, Inst. Phys. Conf. Ser. 83, 233 (1986). | en_US |
dc.identifier.citedreference | T. E. Zipperian, L. R. Dawson, T. J. Drummond, J. E. Schirber, and I. J. Fritz, Appl. Phys. Lett. 52, 975 (1988). | en_US |
dc.identifier.citedreference | D. A. Broido and L. J. Sham, Phys. Rev. B 31, 888 (1985). | en_US |
dc.owningcollname | Physics, Department of |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.