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Mechanisms of nitrogen incorporation in GaAsNGaAsN alloys
dc.contributor.authorReason, M.en_US
dc.contributor.authorMcKay, H. A.en_US
dc.contributor.authorYe, W.en_US
dc.contributor.authorHanson, S.en_US
dc.contributor.authorGoldman, R. S.en_US
dc.contributor.authorRotberg, V. H. (Victor H.)en_US
dc.date.accessioned2010-05-06T21:32:58Z
dc.date.available2010-05-06T21:32:58Z
dc.date.issued2004-09-06en_US
dc.identifier.citationReason, M.; McKay, H. A.; Ye, W.; Hanson, S.; Goldman, R. S.; Rotberg, V. (2004). "Mechanisms of nitrogen incorporation in GaAsNGaAsN alloys." Applied Physics Letters 85(10): 1692-1694. <http://hdl.handle.net/2027.42/70046>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70046
dc.description.abstractWe have investigated nitrogen incorporation mechanisms in dilute nitride GaAsNGaAsN alloys grown by plasma-assisted molecular-beam epitaxy. A comparison of nuclear reaction analysis and Rutherford backscattering spectrometry in channeling and nonchanneling conditions reveals significant composition-dependent incorporation of NN into nonsubstitutional sites, presumably as either N–NN–N or N–AsN–As split interstitials. Furthermore, we identify the (2×1)(2×1) reconstruction as the surface structure which leads to the highest substitutional NN incorporation, likely due to the high number of group VV sites per unit area available for N–AsN–As surface exchange.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleMechanisms of nitrogen incorporation in GaAsNGaAsN alloysen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136en_US
dc.contributor.affiliationumDepartment of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2145en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70046/2/APPLAB-85-10-1692-1.pdf
dc.identifier.doi10.1063/1.1789237en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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