Quantum real-space transfer in a heterostructure overgrown on the cleaved edge of a superlattice
dc.contributor.author | Gribnikov, Z. S. | en_US |
dc.contributor.author | Vagidov, N. Z. | en_US |
dc.contributor.author | Bashirov, R. R. | en_US |
dc.contributor.author | Mitin, V. V. | en_US |
dc.contributor.author | Haddad, George I. | en_US |
dc.date.accessioned | 2010-05-06T21:34:23Z | |
dc.date.available | 2010-05-06T21:34:23Z | |
dc.date.issued | 2003-01-01 | en_US |
dc.identifier.citation | Gribnikov, Z. S.; Vagidov, N. Z.; Bashirov, R. R.; Mitin, V. V.; Haddad, G. I. (2003). "Quantum real-space transfer in a heterostructure overgrown on the cleaved edge of a superlattice." Journal of Applied Physics 93(1): 330-340. <http://hdl.handle.net/2027.42/70061> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70061 | |
dc.description.abstract | A dispersion relation for an electron in a two-layer (and also multilayer) quantum well (QW) is formed as a result of a certain combination of initial dispersion relations for each of the forming layers. Such a combination can be used to engineer new dispersion relations with desirable properties. The same relates to a two-dimensional electron gas (2DEG) induced in a multilayer medium. In this study, we consider first such a 2DEG in a specific two-layer structure where a superlattice (SL) plays the role of the second half-infinite layer, and electrons with large wave numbers along the SL vector spread from the first ordinary QW layer to this SL. As a result of such a quantum (dynamic) real-space transfer, electrons become heavier, and the dispersion relation achieves an additional negative effective mass (NEM) section. Such NEM dispersion relations were studied for several different material systems, including the two most interesting three-material systems: (1) an isomorphic Al0.15Ga0.85As//GaAs/Al0.5Ga0.5AsAl0.15Ga0.85As//GaAs/Al0.5Ga0.5As structure and (2) a strained In0.53Ga0.47As//InxGa1−xAs/InyAl1−yIn0.53Ga0.47As//InxGa1−xAs/InyAl1−y As structure (x>0.53,(x>0.53, y<0.52)y<0.52) with a strain-balanced InxGa1−xAs/InyAl1−yAsInxGa1−xAs/InyAl1−yAs SL. Most of the results were verified using a simplified 1D model, but some of them were verified by more complicated 2D-model calculations. © 2003 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 211968 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Quantum real-space transfer in a heterostructure overgrown on the cleaved edge of a superlattice | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of ECE, Wayne State University, Detroit, Michigan 48202, | en_US |
dc.contributor.affiliationum | Department of EECS, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationum | Department of ECE, Wayne State University, Detroit, Michigan 48202 | en_US |
dc.contributor.affiliationum | Department of EECS, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70061/2/JAPIAU-93-1-330-1.pdf | |
dc.identifier.doi | 10.1063/1.1522814 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
dc.identifier.citedreference | Z. S. Gribnikov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) FTPPA46, 1380 (1972)[Sov. Phys. Semicond. SPSEAX6, 1204 (1973)]. | en_US |
dc.identifier.citedreference | K. Hess, H. Morkoc, H. Shichijo, and B. G. Streetman, Appl. Phys. Lett. APPLAB35, 469 (1979). | en_US |
dc.identifier.citedreference | Z. S. Gribnikov, K. Hess, and G. A. Kosinovsky, J. Appl. Phys. JAPIAU77, 1337 (1995). | en_US |
dc.identifier.citedreference | Z. S. Gribnikov and A. N. Korshak, Semiconductors SMICES28, 812 (1994). | en_US |
dc.identifier.citedreference | Z. S. Gribnikov, A. N. Korshak, and N. Z. Vagidov, J. Appl. Phys. JAPIAU80, 5799 (1996). | en_US |
dc.identifier.citedreference | Z. S. Gribnikov, R. R. Bashirov, and V. V. Mitin, IEEE J. Sel. Top. Quantum Electron. IJSQEN7, 630 (2001). | en_US |
dc.identifier.citedreference | Z. S. Gribnikov, N. Z. Vagidov, H. Eisele, V. V. Mitin, and G. I. Haddad, Proceedings of the 2001 International Semiconductor Device Research Symposium, Washington, DC, 2001, p. 559. | en_US |
dc.identifier.citedreference | Z. S. Gribnikov, R. R. Bashirov, H. Eisele, V. V. Mitin, and G. I. Haddad, Physica E (Amsterdam) PELNFM12, 276 (2002). | en_US |
dc.identifier.citedreference | L. Pfeiffer, K. W. West, H. L. Stormer, J. P. Eisenstein, K. W. Baldwin, D. Gershoni, and J. Spector, Appl. Phys. Lett. APPLAB56, 1697 (1990). | en_US |
dc.identifier.citedreference | L. Pfeiffer, H. L. Störmer, K. W. Baldwin, K. W. West, A. R. Goñi, A. Pinczuk, R. S. Ashoori, M. M. Dignam, and W. Wegscheider, J. Cryst. Growth JCRGAE127, 849 (1993). | en_US |
dc.identifier.citedreference | W. Wegscheider, L. N. Pfeiffer, A. Pinczuk, K. W. West, M. M. Dignam, R. Hull, and R. E. Leibenguth, J. Cryst. Growth JCRGAE150, 285 (1995). | en_US |
dc.identifier.citedreference | A. Majumdar, L. R. Rokhinson, D. C. Tsui, L. N. Pfeiffer, and K. W. West, Appl. Phys. Lett. APPLAB76, 3600 (2000). | en_US |
dc.identifier.citedreference | R. A. Deutschmann, W. Wegscheider, M. Rother, M. Bichler, and G. Arbstreiter, Appl. Phys. Lett. APPLAB79, 1564 (2001). | en_US |
dc.identifier.citedreference | R. A. Deutschmann, W. Wegscheider, M. Rother, M. Bichler, and G. Arbstreiter, Physica E (Amsterdam) PELNFM12, 281 (2002). | en_US |
dc.identifier.citedreference | S.-L. Chuang, Physics of Optoelectronic Devices (Wiley, New York, 1995). | en_US |
dc.identifier.citedreference | Z. S. Gribnikov, N. Z. Vagidov, and V. V. Mitin, J. Computat. Electron (to be published). | en_US |
dc.identifier.citedreference | A. Neogi, H. Yoshida, T. Mosume, N. Georgiev, and O. Wada, IEEE J. Sel. Top. Quantum Electron. IJSQEN7, 710 (2001). | en_US |
dc.identifier.citedreference | N. Georgiev and T. Mosume, J. Vac. Sci. Technol. B JVTBD919, 1747 (2001). | en_US |
dc.identifier.citedreference | S. Muto and T. Inata, Semicond. Sci. Technol. SSTEET9, 1157 (1994). | en_US |
dc.identifier.citedreference | J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, S.-N. G. Chu, and A. Y. Cho, Appl. Phys. Lett. APPLAB72, 680 (1998). | en_US |
dc.identifier.citedreference | S. Slivken and M. Razeghi, Proceedings of the 2001 International Semiconductor Device Research Symposium, Washington, DC, 2001, 514. | en_US |
dc.identifier.citedreference | H. Asai and Y. Kawamura, Appl. Phys. Lett. APPLAB56, 746 (1990). | en_US |
dc.identifier.citedreference | J. C. Bean, Proc. IEEE IEEPAD80, 571 (1992). | en_US |
dc.identifier.citedreference | K. Kawaguchi, Y. Shiraki, N. Usami, J. Zhang, N. J. Woods, G. Breton, and G. Parry, Appl. Phys. Lett. APPLAB79, 344 (2001). | en_US |
dc.identifier.citedreference | C. D. Akyüz, H. T. Johnson, A. Zaslavsky, L. B. Freund, and D. A. Syphers, Phys. Rev. B PRBMDO60, 16597 (1999). | en_US |
dc.identifier.citedreference | J. Liu, A. Zaslavsky, C. D. Akyüz, B. R. Perkins, and L. B. Freund, Phys. Rev. B PRBMDO62, 7731 (2000). | en_US |
dc.identifier.citedreference | H. Akiyama, T. Someya, M. Yoshita, T. Sasaki, and H. Sakaki, Phys. Rev. B PRBMDO57, 3765 (1998). | en_US |
dc.identifier.citedreference | M. Yoshita, H. Akiyama, T. Someya, and H. Sakaki, J. Appl. Phys. JAPIAU83, 3777 (1998). | en_US |
dc.identifier.citedreference | H. Akiyama, J. Phys.: Condens. Matter JCOMEL10, 3095 (1998). | en_US |
dc.identifier.citedreference | Handbook of Mathematical Functions, edited by M. Abramowitz and I. A. Stegun (National Bureau of Standards, 1964). | en_US |
dc.identifier.citedreference | S. Adachi, J. Appl. Phys. JAPIAU58, R1 (1985). | en_US |
dc.identifier.citedreference | L. R. Wilson, P. T. Keightley, J. W. Cockburn, J. P. Duck, M. S. Skolnick, J. C. Clark, G. Hill, M. Moran, and R. Grey, Appl. Phys. Lett. APPLAB75, 2079 (1999). | en_US |
dc.identifier.citedreference | S. Tiwari and D. L. Frank, Appl. Phys. Lett. APPLAB60, 630 (1992). | en_US |
dc.owningcollname | Physics, Department of |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.