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Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
dc.contributor.authorBiswas, Dipankaren_US
dc.contributor.authorDebbar, N.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorRazeghi, M.en_US
dc.contributor.authorDefour, M.en_US
dc.contributor.authorOmnes, F.en_US
dc.date.accessioned2010-05-06T21:35:13Z
dc.date.available2010-05-06T21:35:13Z
dc.date.issued1990-02-26en_US
dc.identifier.citationBiswas, D.; Debbar, N.; Bhattacharya, P.; Razeghi, M.; Defour, M.; Omnes, F. (1990). "Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition." Applied Physics Letters 56(9): 833-835. <http://hdl.handle.net/2027.42/70070>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70070
dc.description.abstractWe have independently estimated the conduction‐ and valence‐band offsets ΔEc and ΔEv in GaAs/Ga0.51In0.49P quantum wells by measuring the capacitance transient resulting from thermal emission of carriers from the respective wells. The heterostructure samples were grown by low‐pressure metalorganic chemical vapor deposition. The band offsets are extrapolated from the emission activation energies with appropriate corrections. The estimated values of ΔEc and ΔEv are 0.198 and 0.285 eV, respectively.en_US
dc.format.extent3102 bytes
dc.format.extent237793 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleConduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor depositionen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering & Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.contributor.affiliationotherThomson‐CSF/LCR, Domaine de Corbeville, BP‐10, 91401 Orsay, Franceen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70070/2/APPLAB-56-9-833-1.pdf
dc.identifier.doi10.1063/1.102677en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceY. J. Chan, D. Pavlidis, M. Razeghi, M. Jaffe, and J. Singh, in Proceedings of the Fifteenth International Symposium on Gallium Arsenide and Related Compounds, Atlanta, edited by J. S. Harris (Institute of Physics, Bristol, 1989), p. 459.en_US
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dc.identifier.citedreferenceN. Debbar, D. Biswas, and P. K. Bhattacharya, Phys. Rev. B 40, 1058 (1989).en_US
dc.identifier.citedreferenceM. Razeghi, M. Defour, F. Omnes, M. Dobers, J. P. Vieren, and Y. Guldner, Appl. Phys. Lett. 55, 457 (1989).en_US
dc.owningcollnamePhysics, Department of


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