Inhomogeneous broadening of intersubband transitions due to nonscreening roughness of heterointerfaces
dc.contributor.author | Vasko, F. T. | en_US |
dc.contributor.author | Sun, J. P. | en_US |
dc.contributor.author | Haddad, George I. | en_US |
dc.contributor.author | Mitin, V. V. | en_US |
dc.date.accessioned | 2010-05-06T21:35:19Z | |
dc.date.available | 2010-05-06T21:35:19Z | |
dc.date.issued | 2000-04-01 | en_US |
dc.identifier.citation | Vasko, F. T.; Sun, J. P.; Haddad, G. I.; Mitin, V. V. (2000). "Inhomogeneous broadening of intersubband transitions due to nonscreening roughness of heterointerfaces." Journal of Applied Physics 87(7): 3582-3584. <http://hdl.handle.net/2027.42/70071> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70071 | |
dc.description.abstract | The shape of the terahertz absorption peak in quantum wells with rough heterointerfaces is studied. Although the long-range variations of the ground level are screened in heavily doped structures, the intersubband in-plane energy remains nonuniform due to the second-level variations. The equation for intersubband polarization is considered in the resonant approximation, taking into account the depolarization shift. The line shape of the intersubband absorption peak is described for the case with long-range variations of heterointerfaces. © 2000 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 59632 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Inhomogeneous broadening of intersubband transitions due to nonscreening roughness of heterointerfaces | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.contributor.affiliationum | Department of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202 | en_US |
dc.contributor.affiliationother | Institute of Semiconductor Physics, Kiev, 252650, Ukraine | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70071/2/JAPIAU-87-7-3582-1.pdf | |
dc.identifier.doi | 10.1063/1.372386 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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dc.owningcollname | Physics, Department of |
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