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Performance characteristics of In0.6Ga0.4As/In0.52Al0.48As modulation‐doped field‐effect transistor monolithically integrated with In0.53Ga0.47As p‐i‐n photodiodes
dc.contributor.authorZebda, Yousefen_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorPavlidis, Dimitrisen_US
dc.contributor.authorHarrang, J. P.en_US
dc.date.accessioned2010-05-06T21:36:42Z
dc.date.available2010-05-06T21:36:42Z
dc.date.issued1990-08-15en_US
dc.identifier.citationZebda, Y.; Bhattacharya, P. K.; Pavlidis, D.; Harrang, J. P. (1990). "Performance characteristics of In0.6Ga0.4As/In0.52Al0.48As modulation‐doped field‐effect transistor monolithically integrated with In0.53Ga0.47As p‐i‐n photodiodes." Journal of Applied Physics 68(4): 1918-1920. <http://hdl.handle.net/2027.42/70086>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70086
dc.description.abstractPseudomorphic In0.6Ga0.4As/In0.52Al0.48As 1 μm gate modulation‐doped field‐effect transistors have been monolithically integrated with In0.53Ga0.47As photodiodes for front‐end photoreceivers using one‐step molecular‐beam epitaxy and lithography techniques. A 1‐μm thick undoped In0.52Al0.48As layer is used to isolate the two devices. The transistors are characterized by gm(ext) =500 mS/mm and fT =9 GHz. The temporal response of the photodiodes is characterized by a linewidth of 60 ps. The eye pattern of the photoreceiver circuit for 1.7 Gbit/s pseudorandom optical signal is open and it is expected that the circuit can perform at bandwidths up to 2.5 GHz. Measured bandwidths of ∼6.5 GHz are obtained by using regrowth.en_US
dc.format.extent3102 bytes
dc.format.extent562102 bytes
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dc.format.mimetypeapplication/octet-stream
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titlePerformance characteristics of In0.6Ga0.4As/In0.52Al0.48As modulation‐doped field‐effect transistor monolithically integrated with In0.53Ga0.47As p‐i‐n photodiodesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High‐Frequency Microelectronics and Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherBoeing Aerospace and Electronics, High Technology Center, Bellevue, Washington 98008en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70086/2/JAPIAU-68-4-1918-1.pdf
dc.identifier.doi10.1063/1.346584en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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