Show simple item record

Dynamic characteristics of high-speed In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperature

dc.contributor.authorGhosh, S.en_US
dc.contributor.authorPradhan, S.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:36:59Z
dc.date.available2010-05-06T21:36:59Z
dc.date.issued2002-10-14en_US
dc.identifier.citationGhosh, S.; Pradhan, S.; Bhattacharya, P. (2002). "Dynamic characteristics of high-speed In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperature." Applied Physics Letters 81(16): 3055-3057. <http://hdl.handle.net/2027.42/70089>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70089
dc.description.abstractWe have measured the room-temperature modulation characteristics of self-organized In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs quantum dot lasers in which electrons are injected into the dot lasing states by tunneling. A small-signal modulation bandwidth of f−3 dB = 22 GHzf−3dB=22GHz is measured. Values of differential gain at 288 K of dg/dn ≅ 8.85×10−14 cm2dg/dn≅8.85×10−14cm2 and gain compression factor ε = 7.2×10−16 cm3ε=7.2×10−16cm3 are derived from the modulation data. Extremely low values of linewidth enhancement factor α ∼ 1α∼1 and chirp <0.6 Å were also measured in the devices. © 2002 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent57526 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleDynamic characteristics of high-speed In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperatureen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109-2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70089/2/APPLAB-81-16-3055-1.pdf
dc.identifier.doi10.1063/1.1514823en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceD. Bimberg, M. Grundmann, and N. N. Ledenstov, Quantum Dot Heterostructures (Wiley, Chichester, UK, 1998).en_US
dc.identifier.citedreferenceG. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, Electron. Lett. ELLEAK35, 1163 (1999).en_US
dc.identifier.citedreferenceP. M. Varangis, H. Li, G. T. Liu, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, Electron. Lett. ELLEAK36, 1544 (2000).en_US
dc.identifier.citedreferenceD. Bimberg, M. Grundmann, F. Heinrichsdorff, N. N. Ledentsov, V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, Y. M. Shernyakov, B. V. Volovik, A. F. Tasul’nikov, P. S. Kop’ev, and Zh. I. Alferov, Thin Solid Films THSFAP367, 235 (2000).en_US
dc.identifier.citedreferenceT. Sosnowski, T. Norris, H. Jiang, J. Singh, K. Kamath, and P. Bhattacharya, Phys. Rev. B PRBMDO57, R9423 (1998).en_US
dc.identifier.citedreferenceJ. Urayama, T. Norris, J. Singh, and P. Bhattacharya, Phys. Rev. Lett. PRLTAO86, 4930 (2001).en_US
dc.identifier.citedreferenceK. Kim, T. Norris, and P. Bhattacharya, 14th Annual Meeting of the Lasers and Electro-Optics Society (LEOS), San Diego, 2001.en_US
dc.identifier.citedreferenceJ. Urayama, T. Norris, H. Jiang, J. Singh, and P. Bhattacharya, Appl. Phys. Lett. APPLAB80, 2162 (2002).en_US
dc.identifier.citedreferenceP. Bhattacharya, K. Kamath, J. Singh, D. Klotzkin, J. Phillips, H.-T. Jiang, N. Chervela, T. Norris, T. Sosnowski, J. Laskar, and M. Ramana Murty, IEEE Trans. Electron Devices IETDAI46, 871 (1999).en_US
dc.identifier.citedreferenceD. Klotzkin, K. Kamath, K. Vineberg, P. Bhattacharya, R. Murty, and J. Laskar, IEEE Photonics Technol. Lett. IPTLEL10, 932 (1998).en_US
dc.identifier.citedreferenceH. Yoon, H. C. Sun, and P. Bhattacharya, Electron. Lett. ELLEAK30, 1675 (1994).en_US
dc.identifier.citedreferenceP. Bhattacharya, J. Singh, H. Yoon, X. Zhang, A. Gutierrez-Aitken, and Y. Lam, IEEE J. Quantum Electron. IEJQA732, 1620 (1996).en_US
dc.identifier.citedreferenceL. Asryan and S. Luryi, IEEE J. Quantum Electron. IEJQA737, 905 (2001).en_US
dc.identifier.citedreferenceG. Walter, N. Holonyak, Jr., J. H. Ryou, and R. D. Dupuis, Appl. Phys. Lett. APPLAB79, 3215 (2001).en_US
dc.identifier.citedreferenceP. Bhattacharya and S. Ghosh, Appl. Phys. Lett. APPLAB80, 3482 (2002).en_US
dc.identifier.citedreferenceD. Klotzkin and P. Bhattacharya, IEEE J. Lightwave Technol. JLTEDG17, 1634 (1999).en_US
dc.identifier.citedreferenceT. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, IEEE Photonics Technol. Lett. IPTLEL11, 1527 (1999).en_US
dc.identifier.citedreferenceJ. Stohs, D. Bossert, D. Gallant, and S. Brueck, IEEE J. Quantum Electron. IEJQA737, 1449 (2001).en_US
dc.identifier.citedreferenceH. Saito, K. Nishi, and S. Sugou, Electron. Lett. ELLEAK37, 1293 (2001).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.