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Structural evolution of dislocation half-loops in epitaxial BaTiO3BaTiO3 thin films during high-temperature annealing

dc.contributor.authorSun, H. P.en_US
dc.contributor.authorPan, Xiaoqingen_US
dc.contributor.authorHaeni, J. H.en_US
dc.contributor.authorSchlom, Darrell G.en_US
dc.date.accessioned2010-05-06T21:38:01Z
dc.date.available2010-05-06T21:38:01Z
dc.date.issued2004-09-13en_US
dc.identifier.citationSun, H. P.; Pan, X. Q.; Haeni, J. H.; Schlom, D. G. (2004). "Structural evolution of dislocation half-loops in epitaxial BaTiO3BaTiO3 thin films during high-temperature annealing." Applied Physics Letters 85(11): 1967-1969. <http://hdl.handle.net/2027.42/70100>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70100
dc.description.abstractBaTiO3BaTiO3 thin films were grown on (001) SrTiO3(001) SrTiO3 by reactive molecular beam epitaxy. Transmission electron microscopy studies showed that there is a high density of dislocation half-loops inside 8- and 12-nm12-nm-thick films. By thermal annealing at 1000°C1000°C, the isolated small dislocation half-loops grow and combine to form a self-assembled regular dislocation network at the film/substrate interface. Threading dislocations in the films are removed and the lattice mismatch strain in the film is nearly completely relaxed by annealing at high temperature.en_US
dc.format.extent3102 bytes
dc.format.extent466722 bytes
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dc.format.mimetypeapplication/octet-stream
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleStructural evolution of dislocation half-loops in epitaxial BaTiO3BaTiO3 thin films during high-temperature annealingen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science & Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136en_US
dc.contributor.affiliationotherDepartment of Materials Science & Engineering, Penn State University, University Park, Pennsylvania 16802-5005en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70100/2/APPLAB-85-11-1967-1.pdf
dc.identifier.doi10.1063/1.1789233en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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