View Item 

Show simple item record

Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors
dc.contributor.authorDehé, Alfonsen_US
dc.contributor.authorHartnagel, Hans L.en_US
dc.contributor.authorPavlidis, Dimitrisen_US
dc.contributor.authorHong, Kyushiken_US
dc.contributor.authorKuphal, E.en_US
dc.date.accessioned2010-05-06T21:39:46Z
dc.date.available2010-05-06T21:39:46Z
dc.date.issued1996-11-11en_US
dc.identifier.citationDehé, Alfons; Hartnagel, Hans L.; Pavlidis, Dimitris; Hong, Kyushik; Kuphal, E. (1996). "Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors." Applied Physics Letters 69(20): 3039-3041. <http://hdl.handle.net/2027.42/70119>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70119
dc.description.abstractWe present a concept for the realization of InGaAs/InP micromachined thermoelectric sensors. The advantages of InGaAs lattice matched to InP combine perfectly for this application. The high selectivity of wet chemical etching of InP against InGaAs is ideally suited for surface bulk micromachining. Thermoelectric InGaAs sensors profit from the high thermal resistivity combined with high electrical conductivity and Seebeck effect. Thanks to the material parameters a responsivity of 257 V/W and relative detectivity of 6.4×108 cm Hz−1/2/W are expected for infrared sensors. © 1996 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent57838 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleProperties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensorsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, The University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109‐2122en_US
dc.contributor.affiliationotherInstitut für Hochfrequenztechnik, Technische Hochschule Darmstadt, Merckstr. 25, D‐64283 Darmstadt, Germanyen_US
dc.contributor.affiliationotherForschungszentrum der Deutschen Telekom, Am Kavalleriesand 3, 64295 Darmstadt, Germanyen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70119/2/APPLAB-69-20-3039-1.pdf
dc.identifier.doi10.1063/1.116832en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceJ.Schieferdecker, R.Quad, E.Holzenkämpfer, and M.Schulze, Sens. Actuators A SAAPEBINS46-47, 422(1995).en_US
dc.identifier.citedreferenceR.Leggenhager, H.Baltes, and T.Ebel, Sens. Actuators A SAAPEBINS37-38, 216(1993).en_US
dc.identifier.citedreferenceA.Dehé, K.Fricke, and H. L.Hartnagel, Sens. Actuators A SAAPEBINS46-47, 432(1995).en_US
dc.identifier.citedreferenceA. Dehé and H. L. Hartnagel, IEEE Trans. Electron Devices 43 (1996) (to be published).en_US
dc.identifier.citedreferenceS.Adachi, J. Appl. Phys. JAPIAUAIP54, 1844(1983).en_US
dc.identifier.citedreferenceF. Völklein and H. Baltes, J. Microelectromechanical Syst. 1, 193 (1992).en_US
dc.identifier.citedreferenceS.Hava and R.Hunsberger, J. Appl. Phys. JAPIAUAIP57, 5330(1985).en_US
dc.identifier.citedreferenceSemiconductors, Landolt-Börnstein (Springer, Berlin, 1984), Vol. 17, p. 578.en_US
dc.identifier.citedreferenceW. Kowalsky, Dissertation at the Technische Universität Carolo-Wilhelmina, Braunschweig, Germany, 1985.en_US
dc.identifier.citedreferenceF. Völklein and H. Baltes, Sens. Mater. 3, 325 (1992).en_US
dc.identifier.citedreferenceE.Kuphal and D.Fritzsche, J. Electron. Mater. JECMA5INS12, 743(1983).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Name:
APPLAB-69-20-3039-1.pdf
Size:
56.48KB
Format:
PDF
View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe its collections in a way that respects the people and communities who create, use, and are represented in them. We encourage you to Contact Us anonymously if you encounter harmful or problematic language in catalog records or finding aids. More information about our policies and practices is available at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.