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Low‐loss optical waveguides made with molecular beam epitaxial In0.012Ga0.988As and In0.2Ga0.8As‐GaAs superlattices

dc.contributor.authorDas, Utpalen_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorDhar, Sunandaen_US
dc.date.accessioned2010-05-06T21:40:47Z
dc.date.available2010-05-06T21:40:47Z
dc.date.issued1986-06-02en_US
dc.identifier.citationDas, Utpal; Bhattacharya, Pallab K.; Dhar, Sunanda (1986). "Low‐loss optical waveguides made with molecular beam epitaxial In0.012Ga0.988As and In0.2Ga0.8As‐GaAs superlattices." Applied Physics Letters 48(22): 1507-1509. <http://hdl.handle.net/2027.42/70130>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70130
dc.description.abstractWe demonstrate for the first time low‐loss optical guiding in In‐doped GaAs. Ridge waveguides are made with single In0.012Ga0.988As ternary layers and In0.2Ga0.8As‐GaAs superlattices. Attenuation constants of ∼1.3 dB/cm are measured and the principal loss mechanism is identified to be scattering at the ridge walls. It is expected that improved fabrication techniques will lead to guides with attenuation ≤0.5 dB/cm.en_US
dc.format.extent3102 bytes
dc.format.extent210937 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLow‐loss optical waveguides made with molecular beam epitaxial In0.012Ga0.988As and In0.2Ga0.8As‐GaAs superlatticesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70130/2/APPLAB-48-22-1507-1.pdf
dc.identifier.doi10.1063/1.96902en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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