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Current‐noise‐power spectra of amorphous silicon thin‐film transistors
dc.contributor.authorBoudry, J. M.en_US
dc.contributor.authorAntonuk, L.E.en_US
dc.date.accessioned2010-05-06T21:41:54Z
dc.date.available2010-05-06T21:41:54Z
dc.date.issued1994-08-15en_US
dc.identifier.citationBoudry, J. M.; Antonuk, L. E. (1994). "Current‐noise‐power spectra of amorphous silicon thin‐film transistors." Journal of Applied Physics 76(4): 2529-2534. <http://hdl.handle.net/2027.42/70142>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70142
dc.description.abstractCurrent‐noise‐power spectra of thin‐film transistors (TFTs) fabricated from hydrogenated amorphous silicon were measured. TFTs with aspect ratios ranging from 1:1 to 16:1 were examined in both the conducting and nonconducting modes. In the conducting mode, the noise levels could be predicted to within an order of magnitude by theories developed for crystalline metal‐oxide field‐effect transistors. In the nonconducting mode, the noise was found to scale with the TFT leakage current in a power‐law fashion.en_US
dc.format.extent3102 bytes
dc.format.extent748533 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleCurrent‐noise‐power spectra of amorphous silicon thin‐film transistorsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Radiation Oncology, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70142/2/JAPIAU-76-4-2529-1.pdf
dc.identifier.doi10.1063/1.357614en_US
dc.identifier.sourceJournal of Applied Physicsen_US
dc.identifier.citedreferenceR. A. Street, MRS Bull. 17, 70 (1992).en_US
dc.identifier.citedreferenceL. E. Antonuk, J. Boudry, W. Huang, D. L. McShan, E. J. Morton, J. Yorkston, M. J. Longo, and R. A. Street, Med. Phys. 19, 1455 (1992).en_US
dc.identifier.citedreferenceL. E. Antonuk, J. Yorkston, W. Huang, J. Boudry, E. J. Morton, and R. A. Street, SPIE 1896, 18 (1993).en_US
dc.identifier.citedreferenceG. Cho, J. S. Drewery, I. Fujieda, T. Jing, S. N. Kaplan, V. Perez-Mendez, S. Qureshi, D. Wildermuth, and R. A. Street, Mater. Res. Soc. Proc. 192, 393 (1990).en_US
dc.identifier.citedreferenceR. A. Street, Hydrogenated Amorphous Silicon (Cambridge University Press, Cambridge, 1991), p. 374.en_US
dc.identifier.citedreferenceS. R. Hofstein, in Field-Effect Transistors, edited by J. T. Wallmark and H. Johnson (Prentice-Hall, Englewood Cliffs, NJ, 1966), Chap. 5, pp. 113–118.en_US
dc.identifier.citedreferenceM. J. Buckingham, Noise in Electronic Devices and Systems (Ellis Horwood, West Sussex, UK, 1983), p. 32.en_US
dc.identifier.citedreferenceM. J. Powell, C. van Berkel, I. D. French, and D. H. Nicholls, Appl. Phys. Lett. 51, 1242 (1987).en_US
dc.identifier.citedreferenceA. van der Ziel, Adv. Electron. Electron Phys. 49, 225 (1979).en_US
dc.identifier.citedreferenceF. M. Klaassen, IEEE Trans. Electron Devices ED-18, 887 (1971).en_US
dc.identifier.citedreferenceMore discussion on α can be found in S. Y. Pai, Ph. D. thesis, University of Minnesota, 1978; A. van der Ziel, Solid-State Electron. 17, 110 (1974).en_US
dc.identifier.citedreferenceA. G. Jordan and N. E. Jordan, IEEE Trans. Electron Devices ED-12, 148 (1965).en_US
dc.identifier.citedreferenceF. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, Rep. Prog. Phys. 44, 479 (1981).en_US
dc.owningcollnamePhysics, Department of


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