Impact ionization coefficients in strained InGaAs/InAlAs multiquantum wells

Gutierrez‐aitken, A. L.; Bhattacharya, Pallab K.

Impact ionization coefficients in strained InGaAs/InAlAs multiquantum wells

dc.contributor.author	Gutierrez‐aitken, A. L.	en_US
dc.contributor.author	Bhattacharya, Pallab K.	en_US
dc.date.accessioned	2010-05-06T21:42:10Z
dc.date.available	2010-05-06T21:42:10Z
dc.date.issued	1993-05-15	en_US
dc.identifier.citation	Gutierrez‐Aitken, A. L.; Bhattacharya, P. K. (1993). "Impact ionization coefficients in strained InGaAs/InAlAs multiquantum wells." Journal of Applied Physics 73(10): 5014-5016. <http://hdl.handle.net/2027.42/70145>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/70145
dc.description.abstract	We have measured electron and hole impact ionization coefficients in biaxially strained InxGa1−xAs/InyAl1−yAs (0.44≤x≤0.62, 0.44≤y≤0.62) multiquantum wells for the first time. It is seen that β/α is enhanced due to strain‐induced changes in band gap, band offsets, and bandstructure for tensile strain in the well and compressive strain in the barrier. The results have been interpreted by considering band‐to‐band impact ionization and band‐edge discontinuity impact ionization processes.	en_US
dc.format.extent	3102 bytes
dc.format.extent	420425 bytes
dc.format.mimetype	text/plain
dc.format.mimetype	application/pdf
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Impact ionization coefficients in strained InGaAs/InAlAs multiquantum wells	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/70145/2/JAPIAU-73-10-5014-1.pdf
dc.identifier.doi	10.1063/1.353822	en_US
dc.identifier.source	Journal of Applied Physics	en_US
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dc.owningcollname	Physics, Department of

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