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Magnetotransport in manganite trilayer junctions grown by 90° off-axis sputtering

dc.contributor.authorNoh, J. S.en_US
dc.contributor.authorNath, T. K.en_US
dc.contributor.authorEom, Chang-Beomen_US
dc.contributor.authorSun, J. Z.en_US
dc.contributor.authorTian, Weien_US
dc.contributor.authorPan, Xiaoqingen_US
dc.date.accessioned2010-05-06T21:42:27Z
dc.date.available2010-05-06T21:42:27Z
dc.date.issued2001-07-09en_US
dc.identifier.citationNoh, J. S.; Nath, T. K.; Eom, C. B.; Sun, J. Z.; Tian, W.; Pan, X. Q. (2001). "Magnetotransport in manganite trilayer junctions grown by 90° off-axis sputtering." Applied Physics Letters 79(2): 233-235. <http://hdl.handle.net/2027.42/70148>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70148
dc.description.abstractWe report magnetotransport studies on La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3 trilayer junctions, fabricated using 90° off-axis sputtering. Films were grown on both (001) (LaAlO3)0.3–(Sr2AlTaO6)0.7(LaAlO3)0.3–(Sr2AlTaO6)0.7 and (110) NdGaO3NdGaO3 substrates. The sputtered trilayers show improved junction resistance uniformity over those made using pulsed laser deposition. Cross-sectional transmission electron microscopy and atomic force microscopy studies confirm smooth interfaces and a uniform barrier. Magnetoresistances up to ∼100% are observed for junctions on (001) (LaAlO3)0.3–(Sr2AlTaO6)0.7(LaAlO3)0.3–(Sr2AlTaO6)0.7 with a 30 Å barrier at 13 K and around 100 Oe. Junction magnetoresistance versus magnetic field behavior is more stable, indicating improved transport and magnetic homogeneity across the junction. © 2001 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleMagnetotransport in manganite trilayer junctions grown by 90° off-axis sputteringen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherDepartment of Materials Science and Engineering, University of Wisconsin—Madison, Madison, Wisconsin 53706en_US
dc.contributor.affiliationotherIBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70148/2/APPLAB-79-2-233-1.pdf
dc.identifier.doi10.1063/1.1383276en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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