Microstructure and crystal defects in epitaxial ZnOZnO film grown on GaGa modified (0001) sapphire surface
dc.contributor.author | Sun, H. P. | en_US |
dc.contributor.author | Pan, Xiaoqing | en_US |
dc.contributor.author | Du, X. L. | en_US |
dc.contributor.author | Mei, Z. X. | en_US |
dc.contributor.author | Zeng, Z. Q. | en_US |
dc.contributor.author | Xue, Q. K. | en_US |
dc.date.accessioned | 2010-05-06T21:44:36Z | |
dc.date.available | 2010-05-06T21:44:36Z | |
dc.date.issued | 2004-11-08 | en_US |
dc.identifier.citation | Sun, H. P.; Pan, X. Q.; Du, X. L.; Mei, Z. X.; Zeng, Z. Q.; Xue, Q. K. (2004). "Microstructure and crystal defects in epitaxial ZnOZnO film grown on GaGa modified (0001) sapphire surface." Applied Physics Letters 85(19): 4385-4387. <http://hdl.handle.net/2027.42/70171> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70171 | |
dc.description.abstract | Surface modification of sapphire (0001) by GaGa can eliminate multiple rotation domains in ZnOZnO films. The existence of GaGa at ZnOZnO∕sapphire interface was confirmed by x-ray energy dispersive spectroscopy in a transmission electron microscope. Atomic detail of mismatch dislocations at interface was imaged by high resolution transmission electron microscopy. Inside the ZnOZnO film, there is a high density of stacking fault. Both pure gliding of ZnO (0001)ZnO (0001) plane and condensation of vacancies or interstatials are possible mechanisms to generate the stacking fault. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 446809 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/octet-stream | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Microstructure and crystal defects in epitaxial ZnOZnO film grown on GaGa modified (0001) sapphire surface | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 | en_US |
dc.contributor.affiliationother | State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100081, People’s Republic of China | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70171/2/APPLAB-85-19-4385-1.pdf | |
dc.identifier.doi | 10.1063/1.1811393 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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