Ablation plasma ion implantation experiments: Measurement of Fe implantation into Si
dc.contributor.author | Qi, Bo | en_US |
dc.contributor.author | Gilgenbach, Ronald M. | en_US |
dc.contributor.author | Lau, Y. Y. | en_US |
dc.contributor.author | Johnston, M. D. | en_US |
dc.contributor.author | Lian, J. | en_US |
dc.contributor.author | Wang, L. M. | en_US |
dc.contributor.author | Doll, G. L. | en_US |
dc.contributor.author | Lazarides, A. | en_US |
dc.date.accessioned | 2010-05-06T21:45:43Z | |
dc.date.available | 2010-05-06T21:45:43Z | |
dc.date.issued | 2001-06-11 | en_US |
dc.identifier.citation | Qi, B.; Gilgenbach, R. M.; Lau, Y. Y.; Johnston, M. D.; Lian, J.; Wang, L. M.; Doll, G. L.; Lazarides, A. (2001). "Ablation plasma ion implantation experiments: Measurement of Fe implantation into Si." Applied Physics Letters 78(24): 3785-3787. <http://hdl.handle.net/2027.42/70183> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70183 | |
dc.description.abstract | Experiments have been performed demonstrating the feasibility of direct implantation of laser-ablated metal ions into a substrate. Initial experiments implanted iron ions into silicon substrates at pulsed, bias voltages up to negative 10 kV. Implantation of Fe ions into Si was confirmed by cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The 7.6 nm depth of damage layers below the Si surface is slightly less than predicted by code calculations for a maximum, effective ion energy of about 8 keV. The ion depth of penetration is limited by the overlying Fe film as well as the slow rise and fall of the voltage. © 2001 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 387757 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Ablation plasma ion implantation experiments: Measurement of Fe implantation into Si | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Intense Energy Beam Interaction Laboratory, Nuclear Engineering and Radiological Sciences Department, University of Michigan, Ann Arbor, Michigan 48109-2104 | en_US |
dc.contributor.affiliationother | Advanced Materials R & D, Timken Research, The Timken Corporation, Canton, Ohio 44706-0930 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70183/2/APPLAB-78-24-3785-1.pdf | |
dc.identifier.doi | 10.1063/1.1379360 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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