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Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors
dc.contributor.authorPhillips, J.en_US
dc.contributor.authorKamath, Kishore K.en_US
dc.contributor.authorBrock, T.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:46:35Z
dc.date.available2010-05-06T21:46:35Z
dc.date.issued1998-06-29en_US
dc.identifier.citationPhillips, J.; Kamath, K.; Brock, T.; Bhattacharya, P. (1998). "Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors." Applied Physics Letters 72(26): 3509-3511. <http://hdl.handle.net/2027.42/70192>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70192
dc.description.abstractWe have investigated the dc characteristics of InGaAs/AlGaAs modulation doped field effect transistors in which a layer of self-organized InAs quantum dots is inserted adjacent to the pseudomorphic quantum well channel. Distinct steps and a negative differential resistance are observed in the current–voltage characteristics at room temperature and lower temperatures. These are attributed to conduction through the bound states in the quantum dots. © 1998 American Institute of Physics.en_US
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dc.format.extent73938 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleCharacteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistorsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70192/2/APPLAB-72-26-3509-1.pdf
dc.identifier.doi10.1063/1.121643en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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