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Molecular beam epitaxial GaAs optical detectors on silica fibers

dc.contributor.authorLi, Wei‐Qien_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorDiVita, S.en_US
dc.date.accessioned2010-05-06T21:47:09Z
dc.date.available2010-05-06T21:47:09Z
dc.date.issued1988-05-23en_US
dc.identifier.citationLi, Wei‐Qi; Chin, Albert; Bhattacharya, Pallab; DiVita, S. (1988). "Molecular beam epitaxial GaAs optical detectors on silica fibers." Applied Physics Letters 52(21): 1768-1770. <http://hdl.handle.net/2027.42/70198>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70198
dc.description.abstractBy using molecular beam epitaxy and post‐growth annealing techniques, we have successfully made GaAs interdigitated photoconductive detectors on D‐shaped silica fibers. The detectors exhibit low leakage current and internal photoconductive gains of up to 15 are measured. To our knowledge this is the first realization of active III‐V optoelectronic devices on fibers and opens up the possibility of realizing optoelectronic integration and circuits directly on fibers.en_US
dc.format.extent3102 bytes
dc.format.extent372768 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleMolecular beam epitaxial GaAs optical detectors on silica fibersen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid‐State Electronics Laboratory and Center for High Frequency Microelectronics, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.contributor.affiliationotherU.S. Army Communications Electronics Command, Fiber‐Optics Network Branch, Fort Monmouth, New Jersey 07703‐5000en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70198/2/APPLAB-52-21-1768-1.pdf
dc.identifier.doi10.1063/1.99620en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceP. K. Bhattacharya, W.‐QLi, D. A. Weinberger, and D. J. Elliott, Electron. Lett. 22, 1107 (1986).en_US
dc.identifier.citedreferenceB. L. Heffner and B. T. Khuri‐Yakub, Appl. Phys. Lett. 48, 1422 (1986).en_US
dc.identifier.citedreferenceB. L. Heffner and G. S. Kino, Opt. Lett. 12, 208 (1987).en_US
dc.identifier.citedreferenceA. Chin, P. K. Bhattacharya, and G. P. Kothiyal, J. Appl. Phys. 62, 1416 (1987).en_US
dc.identifier.citedreferenceC. H. Seager and D. S. Ginley, Appl. Phys. Lett. 34, 337 (1979); C. H. Seager and G. E. Pike, Appl. Phys. Lett. 35, 709 (1979).en_US
dc.owningcollnamePhysics, Department of


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