High power laser semiconductor interactions: A Monte Carlo study for silicon
dc.contributor.author | Yeom, Keesoo | en_US |
dc.contributor.author | Jiang, Hongtao | en_US |
dc.contributor.author | Singh, J. | en_US |
dc.date.accessioned | 2010-05-06T21:47:15Z | |
dc.date.available | 2010-05-06T21:47:15Z | |
dc.date.issued | 1997-02-15 | en_US |
dc.identifier.citation | Yeom, K.; Jiang, H.; Singh, J. (1997). "High power laser semiconductor interactions: A Monte Carlo study for silicon." Journal of Applied Physics 81(4): 1807-1812. <http://hdl.handle.net/2027.42/70199> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70199 | |
dc.description.abstract | In this article, we use Monte Carlo methods to study the interaction of high power laser pulses with electrons in the conduction band of semiconductors. The laser field is represented by a sinusoidal electric field which tends to cause an oscillatory motion in the electrons. The scattering of electrons from the lattice force the electrons to lose phase coherence with the field. The approach is applied to silicon. We use the approach to examine the carrier energy distribution and material breakdown due to the transfer of energy from the laser to the electrons followed by impact ionization. The impact ionization coefficient, α, and its dependence on the laser frequency and field strength is examined and compared to the values in a dc field. In general, the ac value is smaller than the dc value, but at low frequencies and high field strengths, the ac impact ionization coefficient approaches the dc value at the same rms field value. The importance of collisions in the energy transfer process is elucidated. © 1997 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 106050 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | High power laser semiconductor interactions: A Monte Carlo study for silicon | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70199/2/JAPIAU-81-4-1807-1.pdf | |
dc.identifier.doi | 10.1063/1.364037 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
dc.identifier.citedreference | D. Du, X. Liu, G. Korn, J. Squier, and G. Mourou, Appl. Phys. Lett. APPLABAIP64, 3071 (1994). | en_US |
dc.identifier.citedreference | E. Yablonovitch and N. Bloembergen, Phys. Rev. Lett. PRLTAOAIP29, 907 (1972). | en_US |
dc.identifier.citedreference | N. Bloembergen, IEEE J. Quantum Electron. IEJQA7INSQE-10, 375 (1974). | en_US |
dc.identifier.citedreference | P. P. Pronko, P. A. VanRompay, R. K. Singh, F. Qian, D. Du, and X. Liu, Mater. Res. Soc. Symp. Proc. MRSPDHINS397, 45 (1996). | en_US |
dc.identifier.citedreference | W. Spitzer and H. Y. Fan, Phys. Rev. PHRVAOAIP108, 268 (1957). | en_US |
dc.identifier.citedreference | B. Kochman, K. Yeom, and J. Singh, Appl. Phys. Lett. APPLABAIP68, 1936 (1996). | en_US |
dc.identifier.citedreference | C. Jacoboni and L. Reggiani, Rev. Mod. Phys. RMPHATAIP55, 645 (1983). | en_US |
dc.identifier.citedreference | M. V. Fischetti, IEEE Trans. Electron Devices IETDAIINS38, 634 (1991). | en_US |
dc.identifier.citedreference | K. Hess, Advanced Theory of Semiconductor Devices (Prentice Hall, Englewood Cliffs, NJ, 1988). | en_US |
dc.identifier.citedreference | Y. Kamakura, H. Mizuno, M. Yamaji, M. Morifuji, K. Tanaguchi, C. Hamaguchi, T. Kunikiyo, and M. Takenaka, J. Appl. Phys. JAPIAUAIP75, 3500 (1994). | en_US |
dc.identifier.citedreference | L. V. Keldysh, Sov. Phys. JETP SPHJARINS10, 509 (1960). | en_US |
dc.identifier.citedreference | A. R. Beattie, Semicond. Sci. Technol. SSTEETINS3, 48 (1988). | en_US |
dc.identifier.citedreference | R. Thoma, H. J. Peifer, W. L. Engl, W. Quade, R. Brunetti, and C. Jacoboni, J. Appl. Phys. JAPIAUAIP69, 789 (1991). | en_US |
dc.identifier.citedreference | R. Thoma, H. J. Peifer, and W. L. Engl, J. Appl. Phys. JAPIAUAIP69, 2300 (1991). | en_US |
dc.identifier.citedreference | E. Cartier, M. Fischetti, E. Eklund, and F. McFeely, Appl. Phys. Lett. APPLABAIP62, 3339 (1993). | en_US |
dc.identifier.citedreference | N. Sano and A. Yoshi, J. Appl. Phys. JAPIAUAIP77, 2020 (1995). | en_US |
dc.identifier.citedreference | C. A. Lee, R. A. Logan, R. L. Bartdorf, J. J. Kleimack, and W. Wieggmann, Phys. Rev. A PLRAANAIP134, 761 (1964). | en_US |
dc.identifier.citedreference | R. Van Overstraeten and H. De Man, Solid-State Electron. SSELA5INS13, 583 (1970). | en_US |
dc.identifier.citedreference | W. N. Grant, Solid-State Electron. SSELA5INS16, 1189 (1973). | en_US |
dc.identifier.citedreference | M. H. Woods, W. C. Johnson, and M. A. Lampert, Solid-State Electron. SSELA5INS16, 381 (1973). | en_US |
dc.owningcollname | Physics, Department of |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.