Show simple item record

Optical waveguiding in BaTiO3∕MgO∕AlxOy∕GaAsBaTiO3∕MgO∕AlxOy∕GaAs heterostructures

dc.contributor.authorChen, D. Y.en_US
dc.contributor.authorMurphy, T. E.en_US
dc.contributor.authorChakrabarti, S.en_US
dc.contributor.authorPhillips, J. D.en_US
dc.date.accessioned2010-05-06T21:47:31Z
dc.date.available2010-05-06T21:47:31Z
dc.date.issued2004-11-29en_US
dc.identifier.citationChen, D.; Murphy, T. E.; Chakrabarti, S.; Phillips, J. D. (2004). "Optical waveguiding in BaTiO3∕MgO∕AlxOy∕GaAsBaTiO3∕MgO∕AlxOy∕GaAs heterostructures." Applied Physics Letters 85(22): 5206-5208. <http://hdl.handle.net/2027.42/70202>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70202
dc.description.abstractThin films of BaTiO3BaTiO3 with MgO buffer layers were deposited on patterned GaAs substrates incorporating AlxOyAlxOy for optical confinement. The inclusion of AlxOyAlxOy layers are used to provide a means for obtaining thick optical confinement layers as a substitute for MgO cladding layers which have large thermal expansion mismatch with respect to GaAs and BaTiO3BaTiO3 that typically result in thin film cracking. Deposition on patterned features was found to reduce thin film cracking and is attributed to a reduction in thin film stress resulting from thermal expansion mismatch. A maximum ridge width of 10–20 μm is estimated for 1-μm-thick BaTiO3BaTiO3 thin films. Optical waveguiding was observed in BaTiO3∕MgO∕GaAs∕AlxOy∕GaAsBaTiO3∕MgO∕GaAs∕AlxOy∕GaAs ridges suggesting the potential application of these structures for integrated optoelectronics.en_US
dc.format.extent3102 bytes
dc.format.extent246464 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/octet-stream
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleOptical waveguiding in BaTiO3∕MgO∕AlxOy∕GaAsBaTiO3∕MgO∕AlxOy∕GaAs heterostructuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70202/2/APPLAB-85-22-5206-1.pdf
dc.identifier.doi10.1063/1.1828212en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceK. Nashimoto, D. Fork, and T. H. Geballe, Appl. Phys. Lett. 60, 1199 (1992).en_US
dc.identifier.citedreferenceE. J. Tarsa, X. H. Wu, J. P. Ibbetson, J. S. Speck, and J. J. Zinck, Appl. Phys. Lett. 66, 3588 (1995).en_US
dc.identifier.citedreferenceS. W. Robey, J. Vac. Sci. Technol. A 16, 2423 (1998).en_US
dc.identifier.citedreferenceM. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y. Hou, and V. J. Fratello, J. Vac. Sci. Technol. B 14, 2297 (1996).en_US
dc.identifier.citedreferenceD. M. Gill, C. W. Conrad, G. Ford, B. W. Wessels, and S. T. Ho, Appl. Phys. Lett. 71, 1783 (1997).en_US
dc.identifier.citedreferenceA. Petraru, J. Schubert, M. Schmid, and C. Buchal, Appl. Phys. Lett. 81, 1375 (2002).en_US
dc.identifier.citedreferenceV. Srikant, E. J. Tarsa, D. R. Clarke, and J. S. Speck, J. Appl. Phys. 77, 1517 (1995).en_US
dc.identifier.citedreferenceK. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, B. E. Hammons, D. Mathes and R. Hull, IEEE J. Sel. Top. Quantum Electron. 3, 916 (1997).en_US
dc.identifier.citedreferenceM. D. Thouless, Annu. Rev. Mater. Sci. 25, 69 (1995)en_US
dc.identifier.citedreferenceE. Suhir, Int. J. Solids Struct. 27, 1025 (1991).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.