Low‐temperature (10 K) photoluminescence of Ga1−xInxPyAs1−y quantum wells grown by metalorganic chemical vapor deposition
dc.contributor.author | Ludowise, M. J. | en_US |
dc.contributor.author | Biswas, Dipankar | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2010-05-06T21:47:48Z | |
dc.date.available | 2010-05-06T21:47:48Z | |
dc.date.issued | 1990-03-05 | en_US |
dc.identifier.citation | Ludowise, M. J.; Biswas, D.; Bhattacharya, P. K. (1990). "Low‐temperature (10 K) photoluminescence of Ga1−xInxPyAs1−y quantum wells grown by metalorganic chemical vapor deposition." Applied Physics Letters 56(10): 958-960. <http://hdl.handle.net/2027.42/70205> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70205 | |
dc.description.abstract | Ga1−x Inx As1−y Py /InP (x=0.72, y=0.39) lattice‐matched quantum wells (QWs) are grown by low‐pressure metalorganic chemical vapor deposition on (100) and 3° misoriented substrates, using different variations of growth technique. Low‐temperature (10 K) photoluminescence is used to characterize the QWs. We find that substrates oriented closely to (100) (no intentional misorientation) produce QWs of consistently higher quality as judged by the width of the n=1 photoluminescence peak. The use of growth interruptions at the well interfaces severely degrades the QW quality. The narrowest peak observed is 5.8 meV wide from a 70‐Å‐wide well. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 403835 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Low‐temperature (10 K) photoluminescence of Ga1−xInxPyAs1−y quantum wells grown by metalorganic chemical vapor deposition | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122 | en_US |
dc.contributor.affiliationother | Hewlett–Packard Laboratories, 3500 Deer Creek Road, Palo Alto, California 94304 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70205/2/APPLAB-56-10-958-1.pdf | |
dc.identifier.doi | 10.1063/1.102591 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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