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Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures
dc.contributor.authorWeng, X.en_US
dc.contributor.authorClarke, S. J.en_US
dc.contributor.authorYe, W.en_US
dc.contributor.authorKumar, S.en_US
dc.contributor.authorGoldman, R. S.en_US
dc.contributor.authorDaniel, A. V.en_US
dc.contributor.authorClarke, Royen_US
dc.contributor.authorHolt, J.en_US
dc.contributor.authorSipowska, J.en_US
dc.contributor.authorFrancis, Anthony H.en_US
dc.contributor.authorRotberg, V. H. (Victor H.)en_US
dc.date.accessioned2010-05-06T21:49:41Z
dc.date.available2010-05-06T21:49:41Z
dc.date.issued2002-10-01en_US
dc.identifier.citationWeng, X.; Clarke, S. J.; Ye, W.; Kumar, S.; Goldman, R. S.; Daniel, A.; Clarke, R.; Holt, J.; Sipowska, J.; Francis, A.; Rotberg, V. (2002). "Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures." Journal of Applied Physics 92(7): 4012-4018. <http://hdl.handle.net/2027.42/70225>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70225
dc.description.abstractWe have investigated the evolution of structural and optical properties of GaAsN nanostructures synthesized by N ion implantation into epitaxial GaAs, followed by rapid thermal annealing. Transmission electron microscopy and x-ray diffraction indicate the formation of nanometer-sized crystallites with lattice parameters close to those of pure zincblende GaN. The average crystallite size increases with annealing temperature while the size distribution is self-similar and the volume fraction remains constant, suggesting a coarsening process governed by Ostwald ripening. These GaAsN nanostructures exhibit significant photoluminescence in the near infrared range. The apparent lowering of the fundamental band gap is likely due to the incorporation of a small amount of As in GaN. © 2002 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEvolution of structural and optical properties of ion-beam synthesized GaAsN nanostructuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136en_US
dc.contributor.affiliationumApplied Physics Program, University of Michigan, Ann Arbor, Michigan 48109-1120en_US
dc.contributor.affiliationumDepartment of Chemistry, University of Michigan, Ann Arbor, Michigan 48109-1055en_US
dc.contributor.affiliationumDepartment of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2104en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70225/2/JAPIAU-92-7-4012-1.pdf
dc.identifier.doi10.1063/1.1504177en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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