High‐field transport properties of InAsxP1−x/InP (0.3≤x≤1.0) modulation‐ doped heterostructures at 300 and 77 K
dc.contributor.author | Yang, D. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Hong, W. P. | en_US |
dc.contributor.author | Bhat, R. | en_US |
dc.contributor.author | Hayes, J. R. | en_US |
dc.date.accessioned | 2010-05-06T21:50:37Z | |
dc.date.available | 2010-05-06T21:50:37Z | |
dc.date.issued | 1992-07-01 | en_US |
dc.identifier.citation | Yang, D.; Bhattacharya, P. K.; Hong, W. P.; Bhat, R.; Hayes, J. R. (1992). "High‐field transport properties of InAsxP1−x/InP (0.3≤x≤1.0) modulation‐ doped heterostructures at 300 and 77 K." Journal of Applied Physics 72(1): 174-178. <http://hdl.handle.net/2027.42/70235> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70235 | |
dc.description.abstract | We have measured the high‐field transport characteristics of pseudomorphic InAsxP1−x/InP (0.3≤x≤1.0) modulation doped heterostructures at 300 and 77 K. The field dependent steady state average velocities increase steadily with increase in x. The maximum velocities that have been measured in InAs/InP are 1.7×107 cm/s (2.5 kV/cm) and 3.2×107 cm/s (2.2 kV/cm) at 300 and 77 K, respectively. These are the highest velocities measured in any modulation doped heterostructure. The field dependent channel carrier concentration and mobility data indicate that there is very little real space transfer of carriers at high fields and this is confirmed by results from steady state Monte Carlo calculations. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 564843 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | High‐field transport properties of InAsxP1−x/InP (0.3≤x≤1.0) modulation‐ doped heterostructures at 300 and 77 K | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering & Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122 | en_US |
dc.contributor.affiliationother | Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70235/2/JAPIAU-72-1-174-1.pdf | |
dc.identifier.doi | 10.1063/1.352154 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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dc.owningcollname | Physics, Department of |
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