Growth of Cu films on hydrogen terminated Si(100) and Si(111) surfaces

Abstract

We have employed reflection high energy electron diffraction (RHEED) and high resolution transmission electron microscopy (HREM) to study Cu films grown on hydrogen terminated Si(100) and Si(111) substrates by molecular beam epitaxy. X‐ray diffraction and RHEED studies indicate 〈100〉Cu growth on Si(100) and 〈111〉Cu growth on Si(111). HREM reveals orientation relationships of [001]Cu∥[011]Si, (010)Cu∥(011)Si and [112]Cu∥[011]Si, (220)Cu∥(111)Si for Si(100) and Si(111), respectively. A copper silicide layer forms on Si(100) with deposition and appears to aid in proper lattice matching. No significant interdiffused region was detected in the films deposited on Si(111), however, distinct orientational variants were observed in this case.