Epitaxial La-doped SrTiO3SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon
dc.contributor.author | Liu, B. T. | en_US |
dc.contributor.author | Maki, K. | en_US |
dc.contributor.author | So, Y. | en_US |
dc.contributor.author | Nagarajan, V. | en_US |
dc.contributor.author | Ramesh, Ramamoorthy | en_US |
dc.contributor.author | Lettieri, James | en_US |
dc.contributor.author | Haeni, J. H. | en_US |
dc.contributor.author | Schlom, Darrell G. | en_US |
dc.contributor.author | Tian, Wei | en_US |
dc.contributor.author | Pan, Xiaoqing | en_US |
dc.contributor.author | Walker, F. J. | en_US |
dc.contributor.author | McKee, R. A. | en_US |
dc.date.accessioned | 2010-05-06T21:51:46Z | |
dc.date.available | 2010-05-06T21:51:46Z | |
dc.date.issued | 2002-06-24 | en_US |
dc.identifier.citation | Liu, B. T.; Maki, K.; So, Y.; Nagarajan, V.; Ramesh, R.; Lettieri, J.; Haeni, J. H.; Schlom, D. G.; Tian, W.; Pan, X. Q.; Walker, F. J.; McKee, R. A. (2002). "Epitaxial La-doped SrTiO3SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon." Applied Physics Letters 80(25): 4801-4803. <http://hdl.handle.net/2027.42/70247> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70247 | |
dc.description.abstract | Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perovskites on silicon. The conducting template layer, LaxSr1−xTiO3LaxSr1−xTiO3 (LSTO), deposited onto (001) silicon wafers by molecular-beam epitaxy is then used to seed {001}-oriented epitaxial perovskite layers. We illustrate the viability of this approach using PbZr0.4Ti0.6O3PbZr0.4Ti0.6O3 (PZT) as the ferroelectric layer contacted with conducting perovskite La0.5Sr0.5CoO3La0.5Sr0.5CoO3 (LSCO) electrodes. An important innovation that further facilitates this approach is the use of a low-temperature (450 °C) sol–gel process to crystallize the entire ferroelectric stack. Both transmission electron microscopy and x-ray diffraction analysis indicate the LSCO/PZT/LSCO/LSTO/Si heterostructures are epitaxial. The electrical response of ferroelectric capacitors (for pulse widths down to 1 μs) measured via the underlying silicon substrate is identical to measurements made using conventional capacitive coupling method, indicating the viability of this approach. © 2002 American Institute of Physics. | en_US |
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dc.format.extent | 142615 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Epitaxial La-doped SrTiO3SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109-2136 | en_US |
dc.contributor.affiliationother | Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742 | en_US |
dc.contributor.affiliationother | Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802-5005 | en_US |
dc.contributor.affiliationother | Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6118 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70247/2/APPLAB-80-25-4801-1.pdf | |
dc.identifier.doi | 10.1063/1.1484552 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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