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Low‐temperature conductivity of epitaxial ZnSe in the impurity band regime
dc.contributor.authorVaziri, M.en_US
dc.date.accessioned2010-05-06T21:52:31Z
dc.date.available2010-05-06T21:52:31Z
dc.date.issued1994-11-14en_US
dc.identifier.citationVaziri, M. (1994). "Low‐temperature conductivity of epitaxial ZnSe in the impurity band regime." Applied Physics Letters 65(20): 2568-2570. <http://hdl.handle.net/2027.42/70255>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70255
dc.description.abstractLow‐temperature conductivity of several samples of ZnSe grown by molecular‐beam epitaxy has been measured. The data indicate that for samples with carrier concentration below or near Nc, metal insulator transition, the conductivity obeys σ=σ0 exp[−(T0/T)s] at low temperatures with s=1/2. This behavior is a characteristic of variable‐range hopping conduction in the presence of a Coulomb gap. © 1994 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent59508 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLow‐temperature conductivity of epitaxial ZnSe in the impurity band regimeen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Physics & Engineering Science, The University of Michigan–Flint, Flint, Michigan 48502en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70255/2/APPLAB-65-20-2568-1.pdf
dc.identifier.doi10.1063/1.112641en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnameInnovation and Technology, College of (UM-Flint)


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