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Kinetics of Si1−xGex/Si(0≤x≤1) growth by molecular beam epitaxy using disilane and germanium
dc.contributor.authorZhang, F. C.en_US
dc.contributor.authorSingh, J.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:54:29Z
dc.date.available2010-05-06T21:54:29Z
dc.date.issued1995-07-03en_US
dc.identifier.citationZhang, F. C.; Singh, J.; Bhattacharya, P. K. (1995). "Kinetics of Si1−xGex/Si(0≤x≤1) growth by molecular beam epitaxy using disilane and germanium." Applied Physics Letters 67(1): 85-87. <http://hdl.handle.net/2027.42/70276>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70276
dc.description.abstractMolecular beam epitaxy of Si1−xGex alloys, using gaseous Si2H6 and solid Ge as sources, has been studied over the entire composition range (0≤x≤1). From the measured growth rates as a function of x, it is clear that the presence of Ge tends to decrease the Si incorporation rate. This establishes growth via adatom migration to kink sites in a dissociative chemisorption process. © 1995 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent78023 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleKinetics of Si1−xGex/Si(0≤x≤1) growth by molecular beam epitaxy using disilane and germaniumen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid‐State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70276/2/APPLAB-67-1-85-1.pdf
dc.identifier.doi10.1063/1.115516en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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