Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100)

Snyder, C. W.; Orr, B. G.; Munekata, H.

Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100)

dc.contributor.author	Snyder, C. W.	en_US
dc.contributor.author	Orr, B. G.	en_US
dc.contributor.author	Munekata, H.	en_US
dc.date.accessioned	2010-05-06T21:56:16Z
dc.date.available	2010-05-06T21:56:16Z
dc.date.issued	1993-01-04	en_US
dc.identifier.citation	Snyder, C. W.; Orr, B. G.; Munekata, H. (1993). "Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100)." Applied Physics Letters 62(1): 46-48. <http://hdl.handle.net/2027.42/70295>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/70295
dc.description.abstract	We have investigated the molecular beam epitaxy growth of highly strained InGaAs on GaAs(100) as a function of the anion to cation flux ratio. Using reflection high energy electron diffraction the evolution of the film morphology is monitored and the surface lattice constant is measured. It is found that the cation to anion flux ratio dramatically affects the growth mode. Under arsenic‐rich conditions, growth is characterized by a two‐dimensional (2D) to three‐dimensional (3D) morphological transformation. However, for cation‐stabilized conditions, 3D islanding is completely suppressed, and 2D planar growth is observed. We associate these differences in the growth mode with corresponding changes in the surface tension of the overlayer. A high surface tension stabilizes 2D growth. An analysis which relates surface tension to a critical thickness for the onset of coherent island formation supports this view.	en_US
dc.format.extent	3102 bytes
dc.format.extent	533954 bytes
dc.format.mimetype	text/plain
dc.format.mimetype	application/pdf
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Effect of surface tension on the growth mode of highly strained InGaAs on GaAs(100)	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	H. M. Randall Laboratory of Physics, The University of Michigan, Ann Arbor, Michigan 48109‐1120	en_US
dc.contributor.affiliationother	IBM T. J. Watson Research Center, Yorktown Heights, New York 10598	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/70295/2/APPLAB-62-1-46-1.pdf
dc.identifier.doi	10.1063/1.108814	en_US
dc.identifier.source	Applied Physics Letters	en_US
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dc.owningcollname	Physics, Department of

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