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Electron and hole impact ionization coefficients in GaAs‐AlxGa1−xAs superlattices
dc.contributor.authorJuang, Feng‐Yuhen_US
dc.contributor.authorDas, Utpalen_US
dc.contributor.authorNashimoto, Yasunobuen_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T21:57:29Z
dc.date.available2010-05-06T21:57:29Z
dc.date.issued1985-11-01en_US
dc.identifier.citationJuang, F‐Y.; Das, U.; Nashimoto, Y.; Bhattacharya, P. K. (1985). "Electron and hole impact ionization coefficients in GaAs‐AlxGa1−xAs superlattices." Applied Physics Letters 47(9): 972-974. <http://hdl.handle.net/2027.42/70308>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70308
dc.description.abstractElectron and hole multiplication and impact ionization coefficients have been measured with pure carrier injection in p+‐n−‐n+ and p+‐n diodes grown by molecular beam epitaxy. Values of the electron and hole ionization coefficient ratio α/β=2–5 are measured for superlattices with well width Lz≥100 Å and α/β>10 is measured in a graded band‐gap superlattice with a total well and barrier width LB+LZ=120 Å. The ratio decreases and becomes less than unity for smaller well sizes. This is caused by an increase in β(E) while α(E) remains fairly constant. The results have been interpreted by considering varying hole confinement and scattering in the coupled quantum wells.en_US
dc.format.extent3102 bytes
dc.format.extent275493 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleElectron and hole impact ionization coefficients in GaAs‐AlxGa1−xAs superlatticesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70308/2/APPLAB-47-9-972-1.pdf
dc.identifier.doi10.1063/1.95948en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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