Local crystallographic texture and voiding in passivated copper interconnects

Abstract

A correlation between local crystallographic texture and stress‐induced void formation in tantalum‐encapsulated, copper interconnects was revealed by electron backscattering diffraction studies in a scanning electron microscope. Lines exhibiting an overall stronger 〈111〉 texture showed better resistance to void formation. Furthermore, grains adjacent to voids exhibited weaker 〈111〉 texture than grains in unvoided regions of the same line. The locally weaker 〈111〉 texture at voided locations suggests the presence of higher diffusivity, twist boundaries. This work, which represents the first characterization of local texture in stress voided, copper lines, helps to elucidate the relative importance of the thermodynamic and kinetic factors which govern void formation and growth. © 1996 American Institute of Physics.