Carrier velocity‐field characteristics and alloy scattering potential in Si1−xGex/Si
dc.contributor.author | Li, S. H. | en_US |
dc.contributor.author | Hinckley, John M. | en_US |
dc.contributor.author | Singh, J. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2010-05-06T22:03:40Z | |
dc.date.available | 2010-05-06T22:03:40Z | |
dc.date.issued | 1993-09-06 | en_US |
dc.identifier.citation | Li, S. H.; Hinckley, J. M.; Singh, J.; Bhattacharya, P. K. (1993). "Carrier velocity‐field characteristics and alloy scattering potential in Si1−xGex/Si." Applied Physics Letters 63(10): 1393-1395. <http://hdl.handle.net/2027.42/70374> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70374 | |
dc.description.abstract | The alloy scattering potential is an important parameter in SiGe alloys since it not only affects the velocity‐field characteristics for carrier transport, but also allows increased optical transitions by relaxing k‐selection rules. In this letter, we report on the velocity‐field measurements for relaxed and coherently strained SiGe alloys. The alloy scattering potential is obtained from a careful fit to the data. The hole velocity at any field is found to have a bowing behavior as a function of alloy composition. This reflects a strong alloy scattering potential which is calculated to be 0.6 eV for the valence band. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 365742 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Carrier velocity‐field characteristics and alloy scattering potential in Si1−xGex/Si | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid‐State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109‐2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70374/2/APPLAB-63-10-1393-1.pdf | |
dc.identifier.doi | 10.1063/1.109687 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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