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GaAs‐based multiple quantum well tunneling injection lasers

dc.contributor.authorZhang, X.en_US
dc.contributor.authorYuan, Y.en_US
dc.contributor.authorGutierrez‐aitken, A. L.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T22:05:04Z
dc.date.available2010-05-06T22:05:04Z
dc.date.issued1996-10-14en_US
dc.identifier.citationZhang, X.; Yuan, Y.; Gutierrez‐Aitken, A.; Bhattacharya, P. (1996). "GaAs‐based multiple quantum well tunneling injection lasers." Applied Physics Letters 69(16): 2309-2311. <http://hdl.handle.net/2027.42/70389>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70389
dc.description.abstractWe report the modulation characteristics of multiple quantum well tunneling injection lasers designed for 0.98 μm emission wavelength. Electrons are injected into the active region through a single barrier via tunneling. The active region has four quantum wells with different well widths. Improved high frequency performance, compared to similar separate confinement heterostructure lasers, has been demonstrated. The modulation response at 21 GHz is above 0 dB and the extrapolated −3 dB modulation bandwidth is ∼30 GHz under pulsed bias. © 1996 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent60046 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleGaAs‐based multiple quantum well tunneling injection lasersen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70389/2/APPLAB-69-16-2309-1.pdf
dc.identifier.doi10.1063/1.117507en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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