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An electrically injected InAs/GaAs quantum-dot photonic crystal microcavity light-emitting diode
dc.contributor.authorSabarinathan, Jayshrien_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorYu, Pei-Chenen_US
dc.contributor.authorKrishna, Sanjayen_US
dc.contributor.authorCheng, J.en_US
dc.contributor.authorSteel, Duncan G.en_US
dc.date.accessioned2010-05-06T22:06:46Z
dc.date.available2010-05-06T22:06:46Z
dc.date.issued2002-11-11en_US
dc.identifier.citationSabarinathan, J.; Bhattacharya, P.; Yu, P-C.; Krishna, S.; Cheng, J.; Steel, D. G. (2002). "An electrically injected InAs/GaAs quantum-dot photonic crystal microcavity light-emitting diode." Applied Physics Letters 81(20): 3876-3878. <http://hdl.handle.net/2027.42/70407>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70407
dc.description.abstractAn electrically injected InAs/GaAs self-organized quantum-dot photonic crystal microcavity light-emitting diode operating at 1.04 μm is demonstrated. Light–current characteristics are obtained for devices with two- and five-defect period cavities with maximum light output of 0.17 μW measured in the surface-normal direction. Near-field images were also obtained for an injection current of 8.35 mA, showing light confinement within a few periods of the photonic crystal defect microcavity. © 2002 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent273334 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleAn electrically injected InAs/GaAs quantum-dot photonic crystal microcavity light-emitting diodeen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationumHarrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70407/2/APPLAB-81-20-3876-1.pdf
dc.identifier.doi10.1063/1.1521249en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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