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Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurements

dc.contributor.authorYu, Young‐juneen_US
dc.contributor.authorBosman, Gijsen_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T22:08:07Z
dc.date.available2010-05-06T22:08:07Z
dc.date.issued1987-11-02en_US
dc.identifier.citationYu, Young‐June; Bosman, Gijs; Bhattacharya, P. K. (1987). "Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurements." Applied Physics Letters 51(18): 1433-1435. <http://hdl.handle.net/2027.42/70421>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70421
dc.description.abstractThe noise of an In0.53Ga0.47As/In0.52Al0.48As superlattice avalanche photodiode is measured at 700 MHz as a function of applied reverse bias voltage. From the measured data the ratio k of the hole to electron impact ionization coefficients is determined. This ratio is equal to 6 in the field range (0.8–2.3)×105 V/cm; beyond this range k decreases with increasing field. The field dependence of k is attributed to a transition from ionization across the valence‐band‐edge discontinuity to band‐to‐band ionization.en_US
dc.format.extent3102 bytes
dc.format.extent308876 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleImpact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurementsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherDepartment of Electrical Engineering, University of Florida, Gainesville, Florida 32611en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70421/2/APPLAB-51-18-1433-1.pdf
dc.identifier.doi10.1063/1.98648en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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