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Ellipsometric characterization of In0.52Al0.48As and of modulation doped field effect transistor structures on InP substrates
dc.contributor.authorAlterovitz, S. A.en_US
dc.contributor.authorSieg, R. M.en_US
dc.contributor.authorPamulapati, Jagadeeshen_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T22:11:36Z
dc.date.available2010-05-06T22:11:36Z
dc.date.issued1993-03-22en_US
dc.identifier.citationAlterovitz, S. A.; Sieg, R. M.; Pamulapati, J.; Bhattacharya, P. K. (1993). "Ellipsometric characterization of In0.52Al0.48As and of modulation doped field effect transistor structures on InP substrates." Applied Physics Letters 62(12): 1411-1413. <http://hdl.handle.net/2027.42/70458>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70458
dc.description.abstractThe dielectric function of a thick layer of In0.52Al0.48As lattice matched to InP was measured by variable angle spectroscopic ellipsometry in the range 1.9–4.1 eV. The In0.52Al0.48As was protected from oxidation using a thin In0.53Ga0.47As cap that was mathematically removed for the dielectric function estimate. The In0.52Al0.48As dielectric function was then verified by ellipsometric measurements of other In0.53Ga0.47As/In0.52Al0.48As structures, including modulation doped field effect transistors (MODFET), and is shown to provide accurate structure layer thicknesses.en_US
dc.format.extent3102 bytes
dc.format.extent395422 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEllipsometric characterization of In0.52Al0.48As and of modulation doped field effect transistor structures on InP substratesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumEECS, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherNASA Lewis Research Center, Cleveland, Ohio 44135en_US
dc.contributor.affiliationotherEE Department, Cleveland State University, Cleveland, Ohio 44115en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70458/2/APPLAB-62-12-1411-1.pdf
dc.identifier.doi10.1063/1.108695en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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