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Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display

dc.contributor.authorHong, Yongtaeken_US
dc.contributor.authorNahm, Jeong-Yeopen_US
dc.contributor.authorKanicki, Jerzyen_US
dc.date.accessioned2010-05-06T22:12:10Z
dc.date.available2010-05-06T22:12:10Z
dc.date.issued2003-10-20en_US
dc.identifier.citationHong, Yongtaek; Nahm, Jeong-Yeop; Kanicki, Jerzy (2003). "Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display." Applied Physics Letters 83(16): 3233-3235. <http://hdl.handle.net/2027.42/70464>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70464
dc.description.abstractWe report on opto-electrical properties of a current-driven 200 dpi active-matrix organic polymer red light-emitting display (AM–PLED) based on four hydrogenated amorphous silicon thin-film transistor pixel electrode circuits. The AM–PLED luminance and effective light-emission efficiency were 30 cd/m230cd/m2 and 0.3 cd/A, respectively, at the data current equal to 25 mA. The display electroluminescent spectrum has a peak located at and the full width at half maximum value of 644 and 95 nm, respectively, and Commission Internationale de l’Eclairage color coordinates of (0.66,0.33). © 2003 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent223317 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleOptoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting displayen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid-State Electronics Laboratory, Department of EECS, University of Michigan, Ann Arbor, Michigan 48105en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70464/2/APPLAB-83-16-3233-1.pdf
dc.identifier.doi10.1063/1.1617372en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.identifier.citedreferenceJ. Kanicki, J.-H. Kim, J.-Y. Nahm, Y. He, and R. Hattori, 21st International Display Conference, 16–19 October 2001 Nagoya, Japan (Society for Information Display, San Jose, CA, 2001), p. 315.en_US
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dc.owningcollnamePhysics, Department of


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