Channel effective mass and interfacial effects in Si and SiGe metal-oxide-semiconductor field effect transistor: A charge control model study
dc.contributor.author | Zhang, Yifei | en_US |
dc.contributor.author | Singh, Jasprit | en_US |
dc.date.accessioned | 2010-05-06T22:12:49Z | |
dc.date.available | 2010-05-06T22:12:49Z | |
dc.date.issued | 1998-04-15 | en_US |
dc.identifier.citation | Zhang, Yifei; Singh, Jasprit (1998). "Channel effective mass and interfacial effects in Si and SiGe metal-oxide-semiconductor field effect transistor: A charge control model study." Journal of Applied Physics 83(8): 4264-4271. <http://hdl.handle.net/2027.42/70471> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70471 | |
dc.description.abstract | We present results of a numerical formalism developed to address the band structure and charge control problem in nn- and pp-type silicon and silicon-germanium metal-oxide-semiconductor field effect transistors. We focus on the following issues: (i) the dependence of the in-plane carrier effective mass on sheet charge density and germanium content; (ii) the fraction of charge near the interface and the evaluation of the interface roughness matrix element. Results are compared to existing models. For nn-type structure, the effective mass approximation and deformation potential theory is used to describe the electron states. However, for pp-type structure, a six-band k⋅p Kohn–Luttinger formulation is used to describe the hole states due to the strong coupling of heavy-hole, light-hole, and split-off bands. This allows us to examine the influence of the coupling of the heavy-hole, light-hole, and the split-off bands. © 1998 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 156623 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Channel effective mass and interfacial effects in Si and SiGe metal-oxide-semiconductor field effect transistor: A charge control model study | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70471/2/JAPIAU-83-8-4264-1.pdf | |
dc.identifier.doi | 10.1063/1.367184 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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dc.owningcollname | Physics, Department of |
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