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Growth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structures
dc.contributor.authorGebretsadik, H.en_US
dc.contributor.authorKamath, Kishore K.en_US
dc.contributor.authorLinder, Kojo K.en_US
dc.contributor.authorZhang, X.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorCaneau, C.en_US
dc.contributor.authorBhat, R.en_US
dc.date.accessioned2010-05-06T22:15:44Z
dc.date.available2010-05-06T22:15:44Z
dc.date.issued1997-08-04en_US
dc.identifier.citationGebretsadik, H.; Kamath, K.; Linder, K. K.; Zhang, X.; Bhattacharya, P.; Caneau, C.; Bhat, R. (1997). "Growth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structures." Applied Physics Letters 71(5): 581-583. <http://hdl.handle.net/2027.42/70502>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70502
dc.description.abstractWe have investigated the regrowth of GaAs/AlAs quarter-wave Bragg reflectors on patterned mesa InP-based quantum well heterostructures that can be fabricated into 1.55 μm vertical cavity surface emitting lasers. It is seen from transmission electron and scanning electron microscopy that the multiple layer GaAs-based mirrors can be grown on InP-based heterostructure mesas of diameters 10–40 μm without noticeable propagation of defects into the reflector layers or the quantum well region below. At the same time the photoluminescence from the quantum wells after regrowth indicates that lasers can be fabricated. © 1997 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent815917 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleGrowth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationotherBellcore, Redbank, New Jersey 07701-5699en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70502/2/APPLAB-71-5-581-1.pdf
dc.identifier.doi10.1063/1.119800en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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