Low energy kinetic threshold in the growth of cubic boron nitride films

Kidner, S.; Taylor, C. A.; Clarke, Roy

Low energy kinetic threshold in the growth of cubic boron nitride films

dc.contributor.author	Kidner, S.	en_US
dc.contributor.author	Taylor, C. A.	en_US
dc.contributor.author	Clarke, Roy	en_US
dc.date.accessioned	2010-05-06T22:16:23Z
dc.date.available	2010-05-06T22:16:23Z
dc.date.issued	1994-04-04	en_US
dc.identifier.citation	Kidner, S.; Taylor, C. A.; Clarke, Roy (1994). "Low energy kinetic threshold in the growth of cubic boron nitride films." Applied Physics Letters 64(14): 1859-1861. <http://hdl.handle.net/2027.42/70509>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/70509
dc.description.abstract	We report the growth of cubic boron nitride (cBN) films by magnetron sputtering on Si (100) substrates. The films are grown in the presence of negative substrate bias voltages and a nitrogen plasma produced by an electron cyclotron resonance source. We find evidence for a sharp low‐voltage threshold in the substrate bias (−105 V) beyond which the samples are predominantly cBN. The structural quality of the cBN films is optimized in a narrow range of voltages near this threshold. We discuss the important role of energetic ions in the formation of cBN in light of recent theoretical findings.	en_US
dc.format.extent	3102 bytes
dc.format.extent	374047 bytes
dc.format.mimetype	text/plain
dc.format.mimetype	application/pdf
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Low energy kinetic threshold in the growth of cubic boron nitride films	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan 48109‐1120	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/70509/2/APPLAB-64-14-1859-1.pdf
dc.identifier.doi	10.1063/1.111779	en_US
dc.identifier.source	Applied Physics Letters	en_US
dc.identifier.citedreference	R. H. Wentorf, J. Chem. Phys. 26, 956 (1957).	en_US
dc.identifier.citedreference	R. F. Davis, Proc. IEEE 79, 702 (1991).	en_US
dc.identifier.citedreference	S. Strife and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).	en_US
dc.identifier.citedreference	M. Mieno, T. Yoshida, and K. Akashi, J. Jpn. Inst. Metals 52, 199 (1988).	en_US
dc.identifier.citedreference	M. Mieno and T. Yoshida, Surf. Coatings Technol. 52, 87 (1992).	en_US
dc.identifier.citedreference	T. Wada and N. Yamashita, J. Vac. Sci. Technol. A 10, 515 (1992).	en_US
dc.identifier.citedreference	N. Tanabe, T. Hayashi, and M. Iwaki, Diamond and Related Materials, 1, 883 (1992).	en_US
dc.identifier.citedreference	A. K. Ballal, L. Salamanca-Riba, G. L. Doll, C. A. Taylor, and R. Clarke, J. Mater. Res. 7, 1618 (1992).	en_US
dc.identifier.citedreference	D. J. Kester, K. S. Ailey, R. F. Davis, and K. L. More, J. Mater. Res. 8, 1213 (1993).	en_US
dc.identifier.citedreference	A. Weber et al., J. Phys. III (Paris) 2, 1931 (1992).	en_US
dc.identifier.citedreference	A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986).	en_US
dc.identifier.citedreference	D. Kester and R. Messier, Mater. Res. Soc. Symp. Proc. 35, 721 (1992); J. Appl. Phys. 72, 504 (1992).	en_US
dc.identifier.citedreference	W. Wu and S. Fahy, Phys. Rev. B (in press).	en_US
dc.identifier.citedreference	The 100 eV100eV energy range assumes that the incident ion will recoil from the lattice upon collision, transferring approximately 50% of its kinetic energy.	en_US
dc.identifier.citedreference	C. D. Clark and E. W. J. Mitchell, Institute of Physics Conference Series (Institute of Physics, London, 1977), p. 45.	en_US
dc.owningcollname	Physics, Department of

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