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Interference fringe-free transmission spectroscopy of amorphous thin films

dc.contributor.authorLi, Tongen_US
dc.contributor.authorKanicki, Jerzyen_US
dc.contributor.authorKong, Weien_US
dc.contributor.authorTerry, Fred L. Jr.en_US
dc.date.accessioned2010-05-06T22:16:28Z
dc.date.available2010-05-06T22:16:28Z
dc.date.issued2000-11-15en_US
dc.identifier.citationLi, Tong; Kanicki, Jerzy; Kong, Wei; Terry, Fred L. (2000). "Interference fringe-free transmission spectroscopy of amorphous thin films." Journal of Applied Physics 88(10): 5764-5771. <http://hdl.handle.net/2027.42/70510>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70510
dc.description.abstractBased on optical fundamentals, we present in this article a practical method to obtain an interference fringe-free transmission spectrum for hydrogenated amorphous solid thin films. From this spectrum, reliable optical properties, such as the Urbach edge and optical band gap of the thin films, can be extrapolated directly. In terms of the Brewster angle accuracy, the margins of error of the proposed method due to material dispersion are less than ±1%±1% for hydrogenated amorphous silicon and less than ±1.2%±1.2% for hydrogenated amorphous silicon nitride. These figures are less than the detectable limit of the proposed method. © 2000 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent153511 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleInterference fringe-free transmission spectroscopy of amorphous thin filmsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, Solid State Electronics Laboratories, The University of Michigan, 1246-D EECS Building, 1301 Beal Avenue, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70510/2/JAPIAU-88-10-5764-1.pdf
dc.identifier.doi10.1063/1.1290732en_US
dc.identifier.sourceJournal of Applied Physicsen_US
dc.identifier.citedreferenceW. Fuhs, in Amorphous and Microcrystalline Semiconductor Devices, edited by J. Kanicki (Artech House, Norwood, MA, 1991), Vol. II.en_US
dc.identifier.citedreferenceM. Vanecek, A. Abraham, O. Stoika, J. Struchlik, and J. Kocka, Phys. Status Solidi A PSSABA83, 617 (1984).en_US
dc.identifier.citedreferenceK. Pierz, B. Hilgenberg, H. Mell, and G. Weiser, J. Non-Cryst. Solids JNCSBJ97/98, 63 (1987).en_US
dc.identifier.citedreferenceK. Tanaka, and Y. Yamasaki, Philos. Mag. B PMABDJ56, 79 (1987).en_US
dc.identifier.citedreferenceW. B. Jackson, and N. M. Amer, Phys. Rev. B PRBMDO25, 5559 (1982).en_US
dc.identifier.citedreferenceG. D. Cody, B. Abeles, C. Wronski, C. R. Stephens, and B. Brooks, Sol. Cells SOCLD42, 227 (1980).en_US
dc.identifier.citedreferenceT. Li, C. Y. Chen, C. T. Malone, and J. Kanicki, Mater. Res. Soc. Symp. Proc. MRSPDH424, 43 (1996).en_US
dc.identifier.citedreferenceA. R. Forouhi, and I. Bloomer, Phys. Rev. B PRBMDO34, 7018 (1986).en_US
dc.identifier.citedreferenceJ. Tauc, Amorphous and Liquid Semiconductors (Plenum, New York, 1974).en_US
dc.identifier.citedreferenceE, Hecht, Optics, 2nd ed. (Addison-Wesley, 1989), Chap. 8.en_US
dc.identifier.citedreferenceG. R. Fowles, Introduction to Modern Optics, 2nd ed. (Dover, New York, 1989), Chap. 2.en_US
dc.identifier.citedreferenceJ. D. Joannopoulos, and G. Lucovsky, Topics in Appl. Phys. TAPHD456, 61 (1984), edited by J. D. Joannopoulos and G. Lucovsky (Springer-Verlag, New York).en_US
dc.identifier.citedreferenceJ. Ristein, and G. Weiser, Sol. Energy Mater. SOEMDH12, 221 (1985).en_US
dc.identifier.citedreferenceBeyond these spectral regions the absorption of films becomes so significant that little energy will be left to engage interference.en_US
dc.identifier.citedreferenceN. Maley and I. Szafraned, Mater. Res. Soc. Symp. Proc. MRSPDH192, 663 (1990).en_US
dc.identifier.citedreferenceO. S. Heavens, Optical Properties of Thin Solid Films (Dover, New York, 1965), Chap. 4.en_US
dc.identifier.citedreference∵tan  θB=tan(90°−θr)=1/tanθr=nr/ni ∴ tan θr=ni/nr=tanθB′⇒∵tan  θB=tan(90°−θr)=1/tanθr=nr/ni ∴ tan θr=ni/nr=tanθB′⇒Brewster condition.en_US
dc.identifier.citedreferenceT. Li and J. Kanicki, J. Appl. Phys. JAPIAU85, 388 (1999).en_US
dc.identifier.citedreferenceT. Li (unpublished results).en_US
dc.owningcollnamePhysics, Department of


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