The effect of strain on hot‐electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1

Yeom, Keesoo; Hinckley, John M.; Singh, J.

The effect of strain on hot‐electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1

dc.contributor.author	Yeom, Keesoo	en_US
dc.contributor.author	Hinckley, John M.	en_US
dc.contributor.author	Singh, J.	en_US
dc.date.accessioned	2010-05-06T22:19:59Z
dc.date.available	2010-05-06T22:19:59Z
dc.date.issued	1995-11-01	en_US
dc.identifier.citation	Yeom, K.; Hinckley, J. M.; Singh, J. (1995). "The effect of strain on hot‐electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1." Journal of Applied Physics 78(9): 5454-5459. <http://hdl.handle.net/2027.42/70547>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/70547
dc.description.abstract	Monte Carlo methods are used to model the electron and hole high‐field transport in both unstrained and compressively strained silicon and silicon‐germanium alloy. The data are analyzed to determine in what way the thermal noise properties of the carriers are affected by compressive, in‐plane strain. Results include the longitudinal diffusion coefficient, the longitudinal noise temperature, and the longitudinal noise spectral density, for electric fields in the range of 0–20 kV/cm. The results are qualitatively similar for silicon with 1% compressive biaxial strain and for Si0.9Ge0.1/Si(001). The effects of strain are found to be more pronounced for electrons than for holes and are primarily related to changes in the conductivity effective mass. © 1995 American Institute of Physics.	en_US
dc.format.extent	3102 bytes
dc.format.extent	809685 bytes
dc.format.mimetype	text/plain
dc.format.mimetype	application/pdf
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	The effect of strain on hot‐electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/70547/2/JAPIAU-78-9-5454-1.pdf
dc.identifier.doi	10.1063/1.359660	en_US
dc.identifier.source	Journal of Applied Physics	en_US
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dc.owningcollname	Physics, Department of

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