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Magnetic field effect on the sheath thickness in plasma immersion ion implantation
dc.contributor.authorKeidar, Michaelen_US
dc.contributor.authorMonteiro, O. R.en_US
dc.contributor.authorAnders, A.en_US
dc.contributor.authorBoyd, Iain D.en_US
dc.date.accessioned2010-05-06T22:22:42Z
dc.date.available2010-05-06T22:22:42Z
dc.date.issued2002-08-12en_US
dc.identifier.citationKeidar, M.; Monteiro, O. R.; Anders, A.; Boyd, I. D. (2002). "Magnetic field effect on the sheath thickness in plasma immersion ion implantation." Applied Physics Letters 81(7): 1183-1185. <http://hdl.handle.net/2027.42/70576>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70576
dc.description.abstractThe sheath thickness in plasma immersion ion implantation has been investigated in the presence of a transverse magnetic field. It has been found that the steady-state sheath thickness increases with increasing magnetic field strength. This result is in line with a simplified model of the sheath in which the steady-state sheath thickness is determined by the plasma density and ion velocity at the sheath edge. These results suggest that a magnetic field may be used to control the high-voltage sheath in plasma immersion ion implantation. © 2002 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent50280 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleMagnetic field effect on the sheath thickness in plasma immersion ion implantationen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Aerospace Engineering, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationumDepartment of Aerospace Engineering, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherLawrence Berkeley National Laboratory, MS 53, University of California, Berkeley, California 94720en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70576/2/APPLAB-81-7-1183-1.pdf
dc.identifier.doi10.1063/1.1499516en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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