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Effect of coherent strain on hydrogenic acceptor levels in InyGa1−yAs/AlxGa1−xAs quantum well structures
dc.contributor.authorLoehr, John P.en_US
dc.contributor.authorChen, Y. C.en_US
dc.contributor.authorBiswas, Dipankaren_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorSingh, J.en_US
dc.date.accessioned2010-05-06T22:26:37Z
dc.date.available2010-05-06T22:26:37Z
dc.date.issued1990-07-09en_US
dc.identifier.citationLoehr, J. P.; Chen, Y. C.; Biswas, D.; Bhattacharya, P.; Singh, J. (1990). "Effect of coherent strain on hydrogenic acceptor levels in InyGa1−yAs/AlxGa1−xAs quantum well structures." Applied Physics Letters 57(2): 180-182. <http://hdl.handle.net/2027.42/70617>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70617
dc.description.abstractThe biaxial strain produced in lattice‐mismatched epitaxy can have a substantial effect on the valence band structure. Theoretical results are presented for a hydrogenic acceptor in a quantum well under tensile and compressive strain. The acceptor level energy is a strong function of strain and could be used as a signature for the effect of strain on the valence band structure. Experimental studies are carried out on compressively strained InyGa1−yAs/ AlxGa1−xAs quantum well structures and the acceptor level energy is determined by photoluminescence measurements. Good agreement is found with the experiments.en_US
dc.format.extent3102 bytes
dc.format.extent266242 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEffect of coherent strain on hydrogenic acceptor levels in InyGa1−yAs/AlxGa1−xAs quantum well structuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High Frequency Microelectronics, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70617/2/APPLAB-57-2-180-1.pdf
dc.identifier.doi10.1063/1.103977en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.identifier.citedreferenceW. Trzeciakowski and A. P. Roth, Superlatt. Microstruct. 6, 315 (1989).en_US
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dc.identifier.citedreferenceH. Kato, N. Iguchi, S. Chika, M. Nakayama, and N. Sano, J. Appl. Phys. 59, 588 (1986).en_US
dc.identifier.citedreferenceJ. P. Loehr and J. Singh, Phys. Rev. B 41, 3695 (1990).en_US
dc.owningcollnamePhysics, Department of


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