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Use of cation‐stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxy
dc.contributor.authorArias, José M.en_US
dc.contributor.authorSingh, Jaspriten_US
dc.date.accessioned2010-05-06T22:27:46Z
dc.date.available2010-05-06T22:27:46Z
dc.date.issued1989-10-09en_US
dc.identifier.citationArias, José; Singh, Jasprit (1989). "Use of cation‐stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxy." Applied Physics Letters 55(15): 1561-1563. <http://hdl.handle.net/2027.42/70629>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70629
dc.description.abstractReflection high‐energy electron diffraction (RHEED) dynamic studies are used to reveal the strong differences in growth kinetics of CdTe and HgTe grown by molecular beam epitaxy. These differences arise from the stronger CdTe bond compared to the HgTe bond. Surface migration activation barriers for Cd and Hg migration on (100) Te‐stabilized surfaces were estimated from the RHEED dynamic studies to be 0.72 and 0.45 eV, respectively. These differences result in a large disparity in the ideal growth temperature for two‐dimensional layer‐by‐layer growth of the two material systems. However, by altering the growth conditions (i.e., going from anion stabilized to cation stabilized), the disparity in temperatures is shown to vanish. Consequences for this important heterostructure system are discussed.en_US
dc.format.extent3102 bytes
dc.format.extent356018 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleUse of cation‐stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxyen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.contributor.affiliationotherRockwell International Science Center, Thousand Oaks, California 91360en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70629/2/APPLAB-55-15-1561-1.pdf
dc.identifier.doi10.1063/1.102244en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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