Si nanostructures fabricated by anodic oxidation with an atomic force microscope and etching with an electron cyclotron resonance source
dc.contributor.author | Snow, E. S. | en_US |
dc.contributor.author | Juan, W. H. | en_US |
dc.contributor.author | Pang, S. W. | en_US |
dc.contributor.author | Campbell, P. M. | en_US |
dc.date.accessioned | 2010-05-06T22:28:43Z | |
dc.date.available | 2010-05-06T22:28:43Z | |
dc.date.issued | 1995-04-03 | en_US |
dc.identifier.citation | Snow, E. S.; Juan, W. H.; Pang, S. W.; Campbell, P. M. (1995). "Si nanostructures fabricated by anodic oxidation with an atomic force microscope and etching with an electron cyclotron resonance source." Applied Physics Letters 66(14): 1729-1731. <http://hdl.handle.net/2027.42/70639> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70639 | |
dc.description.abstract | Nanometer‐scale Si structures have been fabricated by anodic oxidation with an atomic force microscope (AFM) and dry etching using an electron cyclotron resonance (ECR) source. The AFM is used to anodically oxidize a thin surface layer on a H‐passivated (100) Si surface. This oxide is used as a mask for etching in a Cl2 plasma generated by the ECR source. An etch selectivity ≳20 was obtained by adding 20% O2 to the Cl2 plasma. The AFM‐defined mask withstands a 70 nm deep etch, and linewidths∼10 nm have been obtained with a 30 nm etch depth. © 1995 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 178362 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Si nanostructures fabricated by anodic oxidation with an atomic force microscope and etching with an electron cyclotron resonance source | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122 | en_US |
dc.contributor.affiliationother | Naval Research Laboratory, Washington, DC 20375 | en_US |
dc.contributor.affiliationother | Naval Research Laboratory, Washington, DC 20375 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70639/2/APPLAB-66-14-1729-1.pdf | |
dc.identifier.doi | 10.1063/1.113348 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.identifier.citedreference | SEM imaging could not accurately resolve the linewidths. | en_US |
dc.identifier.citedreference | E. S. Snow, P. M. Cambell, and B. V. Shanabrook, Appl. Phys. Lett. APPLABAIP63, 3488 (1993). | en_US |
dc.owningcollname | Physics, Department of |
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