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Ultraviolet and visible resonance-enhanced Raman scattering in epitaxial Al1−xInxNAl1−xInxN thin films
dc.contributor.authorNaik, Vaman M.en_US
dc.contributor.authorWeber, W. H.en_US
dc.contributor.authorUy, D.en_US
dc.contributor.authorHaddad, D. B.en_US
dc.contributor.authorNaik, Ratnaen_US
dc.contributor.authorDanylyuk, Y. V.en_US
dc.contributor.authorLukitsch, M. J.en_US
dc.contributor.authorAuner, Gregory W.en_US
dc.contributor.authorRimai, L.en_US
dc.date.accessioned2010-05-06T22:29:35Z
dc.date.available2010-05-06T22:29:35Z
dc.date.issued2001-09-24en_US
dc.identifier.citationNaik, V. M.; Weber, W. H.; Uy, D.; Haddad, D.; Naik, R.; Danylyuk, Y. V.; Lukitsch, M. J.; Auner, G. W.; Rimai, L. (2001). "Ultraviolet and visible resonance-enhanced Raman scattering in epitaxial Al1−xInxNAl1−xInxN thin films." Applied Physics Letters 79(13): 2019-2021. <http://hdl.handle.net/2027.42/70648>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70648
dc.description.abstractWe report the observation of ultraviolet and visible near-resonance enhanced Raman scattering in epitaxial wurtzite Al1−xInxNAl1−xInxN (0001) (0 ⩽ x<0.7)(0⩽x<0.7) thin films. The films (thickness ∼ 150 nm)(thickness∼150nm) were grown by plasma source molecular beam epitaxy on sapphire (0001) substrates. A substantial spectral enhancement is seen for Al-rich samples using 244 nm (5.01 eV) radiation due to the closeness of their band gap energy to the excitation energy. On the other hand, samples with x ∼ 0.6x∼0.6 (energy band gap ∼ 2.5 eV)∼2.5eV) show significant enhancement with 514.5 nm (2.41 eV) excitation. The A1(LO)A1(LO) and E2E2 zone center phonons have been observed for all the samples. The A1(LO)A1(LO) phonon frequency shows the expected decrease with increasing x.x. The E2E2 mode shows a two-mode behavior supporting the recent theoretical predictions. Due to increased resonance enhancement, strong second- and third-order spectra are seen in some films. © 2001 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleUltraviolet and visible resonance-enhanced Raman scattering in epitaxial Al1−xInxNAl1−xInxN thin filmsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Natural Sciences, University of Michigan-Dearborn, Dearborn, Michigan 48128en_US
dc.contributor.affiliationumScientific Research Laboratory, Ford Motor Company, Dearborn, Michigan 48121en_US
dc.contributor.affiliationumDepartment of Physics and Astronomy, Wayne State University, Detroit, Michigan 48202en_US
dc.contributor.affiliationumDepartment of Electrical and Computer Engineering, Wayne State University, Detroit, Michigan 48202en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70648/2/APPLAB-79-13-2019-1.pdf
dc.identifier.doi10.1063/1.1404402en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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