Oxidation and phase transitions of epitaxial tin oxide thin films on (012)(1̄012) sapphire
dc.contributor.author | Pan, Xiaoqing | en_US |
dc.contributor.author | Fu, L. | en_US |
dc.date.accessioned | 2010-05-06T22:29:46Z | |
dc.date.available | 2010-05-06T22:29:46Z | |
dc.date.issued | 2001-06-01 | en_US |
dc.identifier.citation | Pan, X. Q.; Fu, L. (2001). "Oxidation and phase transitions of epitaxial tin oxide thin films on (012)(1̄012) sapphire." Journal of Applied Physics 89(11): 6048-6055. <http://hdl.handle.net/2027.42/70650> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70650 | |
dc.description.abstract | We studied the structural behavior and electrical transport properties of epitaxial α-SnO thin films grown on the (012) α-Al2O3(1̄012) α-Al2O3 (sapphire) substrate. Hall effect measurements revealed that the epitaxial as-deposited SnO film is a p-type semiconductor. In situ x-ray diffraction studies show that the α-SnO phase is metastable and will transform into SnO2SnO2 with the rutile type structure when annealed at high temperatures in air. The onset of this phase transformation was observed to begin approximately at 300 °C during heating. Shortly thereafter, rutile SnO2SnO2 was observed to coexist with α-SnO and intermediate products such as Sn and Sn3O4.Sn3O4. After being annealed at temperatures above 600 °C, the film then fully transformed into the rutile SnO2SnO2 phase. Our results show that the α-SnO to SnO2SnO2 structural transformation proceeds initially by the localized disproportionate redistribution of internal oxygen at low temperature, followed by the transformation of the remaining SnO phase and intermediate phases into SnO2SnO2 via the inward diffusion of external oxygen at higher temperatures. Most of the SnO2SnO2 crystallites nucleate epitaxially on α-SnO with the orientation relationship of (101)SnO2//(001)SnO(101)SnO2//(001)SnO and their growth processes are controlled by the (101)SnO2//(001)SnO(101)SnO2//(001)SnO interfaces, leading to a (101) texture and a laminar grain shape for SnO2.SnO2. The relationship between the electrical transport properties and the structural evolution of the film has also been investigated. © 2001 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 891652 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Oxidation and phase transitions of epitaxial tin oxide thin films on (012)(1̄012) sapphire | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70650/2/JAPIAU-89-11-6048-1.pdf | |
dc.identifier.doi | 10.1063/1.1368865 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
dc.identifier.citedreference | Sensors—A Comprehensive Survey, edited by W. Göpel, J. Hesse, and J. N. Zemel (VCH Weinheim, New York, 1991), Vol. 2. | en_US |
dc.identifier.citedreference | K. Ihokura and J. Watson, The Stannic Oxide Gas Sensor—Principles and Applications (CRC, Boca Raton, FL, 1994). | en_US |
dc.identifier.citedreference | G. Advani and A. Jordan, J. Electrochem. Soc. JESOAN123, 29 (1990). | en_US |
dc.identifier.citedreference | N. Yamazoe, Proceedings of the Third International Meeting Chem. Sensors, Cleveland, OH, 1990, pp. 3–8. | en_US |
dc.identifier.citedreference | C. Xu, J. Tamaki, M. Miur, and N. Yamazoe, Sens. Actuators B SABCEB3, 147 (1991). | en_US |
dc.identifier.citedreference | W. Göpel and K. D. Schierbaum, Sens. Actuators B SABCEB26–27, 1 (1995). | en_US |
dc.identifier.citedreference | J.-G. Zheng, X. Q. Pan, M. Schweizer, U. Weimar, W. Göpel, and M. Rühle, Philos. Mag. Lett. PMLEEG73, 93 (1996). | en_US |
dc.identifier.citedreference | J.-G. Zheng, X. Q. Pan, M. Schweizer, F. Zhou, U. Weimar, W. Göpel, and M. Rühle, J. Appl. Phys. JAPIAU79, 7688 (1996). | en_US |
dc.identifier.citedreference | J.-G. Zheng, X. Q. Pan, M. Schweizer, U. Weimar, W. Göpel, and M. Rühle, J. Mater. Sci. JMTSAS31, 2317 (1996). | en_US |
dc.identifier.citedreference | X. Q. Pan and J. G. Zheng, Mater. Res. Soc. Symp. Proc. MRSPDH472, 87 (1997). | en_US |
dc.identifier.citedreference | N. Y. Shishkin, I. M. Zharsky, V. G. Lugin, and V. G. Zarapin, Sens. Actuators B SABCEB48, 403 (1998). | en_US |
dc.identifier.citedreference | M. C. Horrillo, P. Serrini, J. Santos, and L. Manes, Sens. Actuators B SABCEB45, 193 (1997). | en_US |
dc.identifier.citedreference | S. Semancik and R. E. Cavicchi, Thin Solid Films THSFAP206, 81 (1991). | en_US |
dc.identifier.citedreference | M. H. Reddy and A. N. Chandorkar, Sens. Actuators B SABCEB9, 1 (1992). | en_US |
dc.identifier.citedreference | W. I. Cho, H. Jang, and S. R. Lee, Scr. Metall. Mater. SCRMEX32, 815 (1995). | en_US |
dc.identifier.citedreference | M. H. Reddy, S. R. Jawalekar, and A. N. Chandorkar, Thin Solid Films THSFAP169, 117 (1989). | en_US |
dc.identifier.citedreference | L. Fu and X. Q. Pan, J. Electroceram. (submitted). | en_US |
dc.identifier.citedreference | J. Geurts, S. Rau, W. Richter, and F. J. Schmitte, Thin Solid Films THSFAP121, 217 (1984). | en_US |
dc.identifier.citedreference | M. R. Soares, P. H. Dionisio, I. J. R. Baumvol, and W. H. Schreiner, Thin Solid Films THSFAP214, 6 (1992). | en_US |
dc.identifier.citedreference | L. A. Bursill and B. G. Hyde, Acta Crystallogr., Sect. B: Struct. Crystallogr. Cryst. Chem. ACBCARB27, 210 (1971). | en_US |
dc.identifier.citedreference | C. D. Wagner, W. M. Riggs, L. E. Davis, and J. F. Moulder, Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer Corporation, Minnesota). | en_US |
dc.identifier.citedreference | T. J. Chuang, C. R. Brundle, and D. W. Rice, Surf. Sci. SUSCAS59, 413 (1976). | en_US |
dc.identifier.citedreference | A. Srinivasan, K. Jagannathan, M. S. Hedge, and C. N. R. Rao, Indian J. Chem. A IJCADU18, 463 (1979). | en_US |
dc.owningcollname | Physics, Department of |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.