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Linear electro-optic effect due to the built-in electric field in InGaN/GaN quantum wells

dc.contributor.authorJiang, Hongtaoen_US
dc.contributor.authorSingh, Jaspriten_US
dc.date.accessioned2010-05-06T22:31:27Z
dc.date.available2010-05-06T22:31:27Z
dc.date.issued1999-09-27en_US
dc.identifier.citationJiang, Hongtao; Singh, Jasprit (1999). "Linear electro-optic effect due to the built-in electric field in InGaN/GaN quantum wells." Applied Physics Letters 75(13): 1932-1934. <http://hdl.handle.net/2027.42/70668>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70668
dc.description.abstractA strong piezoelectric effect and large lattice mismatch allow one to incorporate high built-in electric fields in InGaN/GaN quantum wells. This letter examines the implications of these fields on the absorption spectra and refractive index changes induced by an external perpendicular electric field. We find that InGaN/GaN quantum wells show linear electro-optic effect due to quantum confined Stark effect. Our results suggest application of InGaN/GaN quantum wells in Mach–Zehnder type modulators and in electroabsorption modulators in the blue light region. © 1999 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLinear electro-optic effect due to the built-in electric field in InGaN/GaN quantum wellsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48105en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70668/2/APPLAB-75-13-1932-1.pdf
dc.identifier.doi10.1063/1.124875en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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